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BUZ100

Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
CategoryDiscrete semiconductor    The transistor   
File Size114KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BUZ100 Overview

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

BUZ100 Parametric

Parameter NameAttribute value
MakerSIEMENS
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)250 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)450 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment250 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)525 ns
Maximum opening time (tons)210 ns
BUZ 100
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Ultra low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Pin 1
G
Type
BUZ 100
Pin 2
D
Pin 3
S
V
DS
50 V
I
D
60 A
R
DS(on)
0.018
Package
TO-220 AB
Ordering Code
C67078-S1348-A2
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
60
Unit
A
I
D
I
Dpuls
240
T
C
= 101 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
E
AS
250
dv/dt
6
mJ
I
D
= 60 A,
V
DD
= 25 V,
R
GS
= 25
L
= 70 µH,
T
j
= 25 °C
Reverse diode dv/dt
kV/µs
I
S
= 60 A,
V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
Gate source voltage
Power dissipation
V
GS
P
tot
±
20
250
V
W
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 175
-55 ... + 175
0.6
75
E
55 / 175 / 56
°C
K/W
Semiconductor Group
1
07/96

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BUZ100 C67078-S1348-A2
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