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BUZ104L

Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)
CategoryDiscrete semiconductor    The transistor   
File Size123KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BUZ104L Overview

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)

BUZ104L Parametric

Parameter NameAttribute value
MakerSIEMENS
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)35 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)17.5 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)90 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment60 W
Maximum pulsed drain current (IDM)70 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)160 ns
Maximum opening time (tons)93 ns
BUZ 104L
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
• 175 °C operating temperature
• also in TO-220 SMD available
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 104L
V
DS
50 V
I
D
17.5 A
R
DS(on)
0.1
Package
TO-220 AB
Ordering Code
C67078-S1358-A2
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
17.5
Unit
A
I
D
I
Dpuls
70
T
C
= 29 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
E
AS
35
dv/dt
6
mJ
I
D
= 17.5 A,
V
DD
= 25 V,
R
GS
= 25
L
= 114 µH,
T
j
= 25 °C
Reverse diode dv/dt
kV/µs
I
S
= 17.5 A,
V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
V
GS
V
gs
P
tot
±
14
±
20
V
W
T
C
= 25 °C
60
Semiconductor Group
1
07/96

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BUZ104L C67078-S1358-A2
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