BUZ11
Data Sheet
June 1999
File Number 2253.2
30A, 50V, 0.040 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Features
• 30A, 50V
• r
DS(ON)
= 0.040Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
BUZ11
PACKAGE
TO-220AB
BRAND
BUZ11
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
4-5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
©
Intersil Corporation 1999
BUZ11
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
BUZ11
50
50
30
120
±20
75
0.6
-55 to 150
E
55/150/56
300
260
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current T
C
= 30
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA (Figure 9)
T
J
= 25
o
C, V
DS
= 50V, V
GS
= 0V
T
J
= 125
o
C, V
DS
= 50V, V
GS
= 0V
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 10)
V
GS
= 20V, V
DS
= 0V
I
D
= 15A, V
GS
= 10V (Figure 8)
V
DS
= 25V, I
D
= 15A (Figure 11)
V
CC
= 30V, I
D
≈
3A, V
GS
= 10V, R
GS
= 50Ω,
R
L
= 10Ω
MIN
50
2.1
-
-
-
-
4
-
-
-
-
-
-
-
TYP
-
3
20
100
10
0.03
8
30
70
180
130
1500
750
250
≤
1.67
≤
75
MAX
-
4
250
1000
100
0.04
-
45
110
230
170
2000
1100
400
UNITS
V
V
µA
µA
nA
Ω
S
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
2. Pulse Test: Pulse width
≤
300ms, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
SYMBOL
I
SD
I
SDM
V
SD
t
rr
Q
RR
T
C
= 25
o
C
T
C
= 25
o
C
T
J
= 25
o
C, I
SD
= 60A, V
GS
= 0V
T
J
= 25
o
C, I
SD
= 30A, dI
SD
/dt = 100A/µs,
V
R
= 30V
TEST CONDITIONS
MIN
-
-
-
-
-
TYP
-
-
1.7
200
0.25
MAX
30
120
2.6
-
-
UNITS
A
A
V
ns
µC
4-6
BUZ11
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
30
0.8
Unless Otherwise Specified
40
V
GS
> 10V
0.6
0.4
20
10
0.2
0
0
25
50
75
100
T
A
, CASE TEMPERATURE (
o
C)
125
150
0
0
50
100
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Z
θJC,
TRANSIENT THERMAL IMPEDANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
t
1
t
2
0.01
10
-5
10
-4
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
3
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
10
2
2.5µs
10µs
100µs
10
1
1ms
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
10
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
10
2
60
P
D
= 75W
50
I
D
, DRAIN CURRENT (A)
10V
40
30
20
10
0
V
GS
= 8.0V
V
GS
= 7.5V
V
GS
= 7.0V
V
GS
= 6.5V
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6
V
GS
= 20V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
10
0
10
0
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
4-7
BUZ11
Typical Performance Curves
I
DS(ON),
DRAIN TO SOURCE CURRENT (A)
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
= 25V
Unless Otherwise Specified
(Continued)
0.15
r
DS(ON)
, ON-STATE RESISTANCE (Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
5.5V
6V
6.5V
7V
7.5V
8V
9V
10V
20V
15
0.10
10
0.05
5
0
0
1
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
7
8
0
0
20
40
I
D
, DRAIN CURRENT (A)
60
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.08
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
= 15A, V
GS
= 10V
0.06
4
V
DS
= V
GS
I
D
= 1mA
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
3
0.04
2
0.02
1
0
-50
0
50
100
150
0
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
10
1
g
fs
, TRANSCONDUCTANCE (S)
10
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
= 25V
T
J
= 25
o
C
C, CAPACITANCE (nF)
10
0
C
ISS
C
OSS
C
RSS
6
4
10
-1
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0
10
20
30
40
2
10
-2
0
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
4-8
BUZ11
Typical Performance Curves
10
3
I
SD
, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
J
= 25
o
C
T
J
= 150
o
C
10
1
Unless Otherwise Specified
(Continued)
15
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 45A
10
2
V
DS
= 10V
10
V
DS
= 40V
5
10
0
10
-1
0
0.5
1.0
1.5
2.0
2.5
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
3.0
0
0
10
20
30
Q
g
, GATE CHARGE (nC)
40
50
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
t
ON
t
d(ON)
t
r
R
L
V
DS
90%
t
OFF
t
d(OFF)
t
f
90%
+
R
G
DUT
-
V
DD
0
10%
90%
10%
V
GS
V
GS
0
10%
50%
PULSE WIDTH
50%
FIGURE 14. SWITCHING TIME TEST CIRCUIT
V
DS
(ISOLATED
SUPPLY)
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
CURRENT
REGULATOR
V
DD
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
D
V
DS
V
GS
12V
BATTERY
0.2µF
50kΩ
0.3µF
G
DUT
0
I
g(REF)
0
I
G
CURRENT
SAMPLING
RESISTOR
S
V
DS
I
D
CURRENT
SAMPLING
RESISTOR
I
g(REF)
0
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
4-9
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