INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BD949F/951F/953F/955F
DESCRIPTION
·DC
Current Gain-
: h
FE
= 40(Min)@ I
C
= 500mA
·Complement
to Type BD950F/952F/954F/956F
APPLICATIONS
·Designed
for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD949F
BD951F
V
CBO
Collector-Base Voltage
BD953F
BD955F
BD949F
BD951F
V
CEO
Collector-Emitter Voltage
BD953F
BD955F
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
100
120
5
5
8
22
150
-65~150
V
A
A
W
℃
℃
100
120
60
80
V
VALUE
60
80
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
8.12
UNIT
℃/W
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD949F
BD951F
I
C
= 100mA ; I
B
= 0
BD953F
BD955F
V
CE(
sat
)
V
BE(
on
)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= 2A; I
B
= 0.2A
I
C
= 2A; V
CE
= 4V
BD949F/951F/953F/955F
CONDITIONS
MIN
60
80
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
100
120
1.0
1.4
0.05
1
0.1
0.2
40
20
3
MHz
V
V
mA
mA
mA
V
CB
= V
CBOmax
; I
E
= 0
1
V
CB
= /
2
V
CBOmax
; I
E
= 0,T
J
=150℃
V
CE
=
1
/
2
V
CEOmax
; I
B
= 0
V
EB
= 5V; I
C
= 0
I
C
= 500mA ; V
CE
= 4V
I
C
= 2A ; V
CE
= 4V
I
C
= 500mA ; V
CE
= 4V
Switching Times
t
on
t
off
Turn-On Time
I
C
= 1.0A; I
B1
= -I
B2
= 0.1A
Turn-Off Time
1.5
μs
0.3
μs
isc website：www.iscsemi.cn
2
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