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BUZ171

Description
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
CategoryDiscrete semiconductor    The transistor   
File Size115KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BUZ171 Overview

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

BUZ171 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)120 mJ
ConfigurationSINGLE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)200 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power consumption environment40 W
Maximum power dissipation(Abs)40 W
Maximum pulsed drain current (IDM)32 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)165 ns
Maximum opening time (tons)125 ns
BUZ 171
SIPMOS
®
Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 171
V
DS
-50 V
I
D
-8 A
R
DS(on)
0.3
Package
TO-220 AB
Ordering Code
C67078-S1450-A2
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
-8
Unit
A
I
D
I
Dpuls
-32
T
C
= 30 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
E
AS
70
mJ
I
D
= -8 A,
V
DD
= -25 V,
R
GS
= 25
L
= 1.1 mH,
T
j
= 25 °C
Gate source voltage
Power dissipation
V
GS
P
tot
±
20
40
V
W
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
3.1
75
E
55 / 150 / 56
°C
K/W
Semiconductor Group
1
07/96

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BUZ171 C67078-S1450-A2
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