,U
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
ZN5529 2N5530
2N5533
2N5534
(212)227-6005
FAX: (973) 376-8960
NPN SILICON POWER TRANSISTORS
RADIATION RESISTANT
10 AMPERES
FEATURES
HIGH POWER
RADIATION EXPOSURE LEVEL TO 5x10™ nvt
TOTAL NEUTRON FLUX GREATER THAN 10 KEV
APPLICATIONS
POWER AMPLIFIER
RADIATION ENVIRONMENTS
ULTRA HIGH FREQUENCY
T0-*61
'All leads Isolated from case
ARSOLUTE MAXIMUM RATINGS
2N5529
2N5530*
2N5533
2N5534*
90V
75V
3V
10 A
4A
VCBO
VCEO
VEBO
'c
IB
COLLECTOR-BASE VOLTAGE
COLLECTOR-EMITTER VOLTAGE
EMITTER-BASE VOLTAGE
CONTINUOUS COLLECTOR CURRENT
CONTINUOUS BASE CURRENT
OPERATING JUNCTION TEMPERATURE
STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
60V
40V
3V
10 A
4A
-65°C I
-65
e
Cto +200°C.
5°C/W •
35 W
PD
POWER DISSIPATION (25°C)
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N5529 2N5530 2N5533 2N5534
ELECTRICAL CHARACTERISTICS ( T
C
= 25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
COLLECTOR EMITTER SUSTAINING VOLTAGE™
(!
c
=50mA)
(IC= 50 mA, NOTE 2)
2N5529. 2N5530
2NS533, 2N5534
2N5529, 2145530
2N5533.2N5534
COLLECTOR-CUTOFF CURRENT
SYMBOL
MIN.
MAX.
UNITS
VCEO(SUS)
40
75
40
75
V
V
V
V
(VCE - 3ov, v
BE
- o, TC - ioo
e
c)
COLLECTOR-CUTOFF CURRENT
(V
CB
- RATED)
(VCB= RATED, NOTE 2)
COLLECTOR-CUTOFF CURRENT
(V
CB
= 30V)
(VCB
- 30V, NOTE 2)
'CEX
1.0
'CBO
1.0
1.0
!
CBO
mA
mA
mA
0.1
1.0
mA
mA
COLLECTOR-CUTOFF CURRENT
(V
CE
= RATED)
EMITTER CUTOFF CURRENT
(V
EB
= 3.0V)
(V
EB
- 3.0V, NOTE 2)
EMITTER FLOATING POTENTIAL
'CEO
50
mA
'EBO
1.0
1.0
mA
mA
(VCB - RATED. IE = o>
DC CURRENT GAIN'
1
'
(VcE 5.0V, IG = 0.5A)
2N5529, 2N5530
VEBF
1.0
V
"FE
40
25
40
30
25
20
2.5
2N5529, 2N5530
2N5533, 2N5534
v
ce(sal)
300
300
200
150
(VCE s.ov, IG •= O.SAJ
(VCE
(VCE
S.OV, IQ = 3.0A)
S.OV, 1C - 3-OA)
(VcE S.OV, Ic = 5.0A)
(V
CE
S.OV, IG = 5.0A)
(VCE
(VCE
2.0V, Ic - 10A)
5
2N5533, 2NS534
2N5529, 2NS530
2N5533, 2N5534
2N5529, 2N5530
2N5533, 2N5534
°V. 'C - 3.0A NOTE 2)
15
7.0
(VcE 5.0V, IC - 3.0ANOTE2)
COLLECTOR-EMITTER SATURATION VOLTAGE<
1
>
(IC = 3.0A, IB - 0.3A)
(I
C
- 0.5A. IB = 4.0A)
(l
c
_ IDA, IB - 4.0A)
(IC = 3.0A, IB = 0.3A, NOTE 2)
(IC = 3.0A, IB = 0.5A, NOTE 2)
BASE-EMITTER SATURATION VOLTAGE!"
(IC - 3.0A, IB = 0.3A)
(IC - 3.0A, IB = 0.5A)
BASE-EMITTER VOLTAGE
(V
CE
= S.OV, I
C
= 3.0A)
(Vc
E
- S.OV, Ic =• 5.0A)
MAGNITUDE OF SMALL SIGNAL GAIN
(Vc
E
= 28V, Ic - 0.5A, 1 = 25 MHz)
SMALL SIGNAL GAIN
(VCE
" S.OV, Ic = 3.0A, f - 1 .0 KHz)
2N5529, 2N5530
2N5533, 2N5S34
OUTPUT CAPACITANCE
(V
CB
= 30V, f = 1 .0 MHz)
2N5529, 2N5530
2N5533, 2N5534
2N5529, 2NSS30
2N5533, 2N5534
2N5529, 2N5530
2N5533, 2N5534
1.25
1.25
V
V
V
V
V
2.0
2.0
3.0
v
BE(sat)
1.5
1.5
V
V
VBE
1.5
3.0
V
V
Ihtal
8.0
h
le
20
15
c
obo
75
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