Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5559
DESCRIPTION
・With
TO-3 package
・Excellent
safe operating area
APPLICATIONS
・For
industrial and commercial equipment
including high fidelity audio amplifiers,
series and shunt regulators and power
switches applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
120
7
10
15
100
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.5
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BE
I
CEO
I
CEX
I
EBO
h
FE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=10A; I
B
=2A
I
C
=10A ; V
CE
=4V
V
CE
=140V; I
B
=0
V
CE
=120V; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=5V
20
MIN
120
TYP.
2N5559
MAX
UNIT
V
5.0
5.7
5.0
2.0
10
2.0
60
V
V
mA
mA
mA
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