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2N5559_15

Description
Silicon NPN Power Transistors
File Size37KB,3 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2N5559_15 Overview

Silicon NPN Power Transistors

Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5559
DESCRIPTION
・With
TO-3 package
・Excellent
safe operating area
APPLICATIONS
・For
industrial and commercial equipment
including high fidelity audio amplifiers,
series and shunt regulators and power
switches applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
120
7
10
15
100
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.5
UNIT
℃/W
JMnic

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