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2N5551

Description
600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Categorysemiconductor    Discrete semiconductor   
File Size122KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2N5551 Overview

600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N5551 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage160 V
stateDISCONTINUED
packaging shaperound
Package Sizecylindrical
Terminal formWire
Terminal locationBOTTOM
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption0.6250 W
Transistor typeUniversal small signal
Minimum DC amplification factor30
Rated crossover frequency100 MHz
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·NPN
high-voltage transistor
·Low
current (max. 300 mA)
·High
voltage (max. 160 V)
·Complements
to
2N5401.
2N5551
APPLICATIONS
·Designed
for Switching and amplification
in high voltage applications , such as telephony
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
C
PARAMETER
Collector-Base Voltage
VALUE
180
UNIT
V
Collector-Emitter Voltage
160
V
Emitter-Base Voltage
6
V
Collector Current-Continuous
0.3
A
Collector Current-Peak
0.6
A
Base Current-Peak
Collector Power Dissipation
@ T
a
<50℃
0.1
A
0.63
W
J
Junction Temperature
150
T
stg
Storage Temperature Range
-65~150
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
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