SMCJ51CA datasheet, PDF - EEWORLD Datasheet

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SMCJ51CA: Description1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB; Categorysemiconductor Discrete semiconductor; File Size934KB，7 Pages; ManufacturerUN semiconductor; Websitehttp://www.unsemi.com.tw/

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1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

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Surface Mount Transient Voltage Suppressors (TVS)

SMCJ Series

Description

The SMCJ series is designed specifically to protect sensitive electronic

equipment from voltage transients induced by lightning and other transient

voltage events.

5.0 To 440 V

1500W

Uni-directional

Bi-directional

Features

For surface mounted applications in order to optimize board space

Low leakage

Uni and Bidirectional unit

Glass passivated junction

Low inductance

Excellent clamping capability

1500W Peak power capability at 10

1000µs waveform Repetition

rate (duty cycle):0.01%

Fast response time: typically less than 1.0ps from 0 Volts to V

min

Typical I

less than 5μA above 12V.

High Temperature soldering: 260°C/40 seconds at terminals

Typical maximum temperature coefficient

ΔV

= 0.1%

@25°C×

ΔT

Plastic package has Underwriters Laboratory Flammability 94V-0

Matte tin lead–free Plated

Halogen free and RoHS compliant

Typical failure mode is short from over-specified voltage or current

Whisker test is conducted based on JEDEC JESD201A per its table

4a and 4c

IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)

ESD protection of data lines in accordance with IEC 61000-4-2

(IEC801-2)

EFT protection of data lines in accordance with IEC 61000-4-4

(IEC801-4)

Functional Diagram

Bi-directional

Cathode

Uni-direction

Anode

Applications

TVS devices are ideal for the protection of I/O interfaces, V

bus and other vulnerable circuits used in Telecom, Computer,

Industrial and Consumer electronic applications.

Maximum Ratings

=25℃ unless otherwise noted)

Parameter

Symbol

PPM

M(AV)

FSM

, T

STG

Value

1500

See Next Table

6.5

200

3.5/5.0

-55 to +150

Unit

Watts

Amps

Watt

Amps

Voltage

°C

Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note

1), (Note 2)

Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)

Power Dissipation on Infinite Heat Sink at T

=75°C

Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)

Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only

(Note 4)

Operating junction and Storage Temperature Range.

Notes:

1. Non-repetitive current pulse, per Fig. 3 and derated above T

= 25°C per Fig. 2.

2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.

4. V

< 3.5V for V

< 200V and V

< 6.5V for V

> 201V.

UN Semiconductor Co., Ltd.

Revision

October 18, 2013

www.unsemi.com.tw

1/7

@ UN Semiconductor Co., Ltd. 2013

Specifications are subject to change without notice.

Please refer to www.unsemi.com.tw for current information.

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