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BUZ344

Description
SIPMOS Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size95KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BUZ344 Overview

SIPMOS Power Transistor

BUZ344 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)400 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-218AA
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)170 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
SIPMOS
®
Power Transistor
BUZ 344
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on
)
Package
Ordering Code
BUZ 344
100 V
50 A
0.035
TO-218 AA
C67078-S3132-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
D
50
A
T
C
= 25 ˚C
Pulsed drain current
I
Dpuls
200
T
C
= 25 ˚C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
50
18.5
mJ
I
D
= 50 A,
V
DD
= 25 V,
R
GS
= 25
L
= 240 µH,
T
j
= 25 ˚C
Gate source voltage
Power dissipation
400
V
GS
P
tot
±
20
170
V
W
T
C
= 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
˚C
0.74
75
E
55 / 150 / 56
K/W
Data Sheet
1
05.99
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