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P4KE22A

Description
UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size140KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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P4KE22A Overview

UNIDIRECTIONAL, SILICON, TVS DIODE

^zmi-Con
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TRANSZORB® Transient Voltage Suppressors
P4KE6.8A thru P4KE540A
FEATURES
DO-204AL (DO-41)
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 us waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
PRIMARY CHARACTERISTICS
V
WM
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
5.8 V to 459 V
6.8 V to 540 V
6.8 V to 440 V
400 W
1.5W
40 A
175°C
Uni-directional, bi-directional
DO-204AL (DO-41)
VBR uni-directional
VBR bi-directional
PPPM
PD
IFSM (uni-directional only)
Tj max.
Polarity
Package
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use CA suffix (e.g. P4KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 us waveform
(1)
(fig.1)
Peak pulse current with a 10/1000 us waveform (
1
>
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half-sine wave uni-directional only <
2
*
Maximum instantaneous forward voltage at 25 A for uni-directional only <
3
)
Operating junction and storage temperature range
SYMBOL
PPPM
IPPM
PD
'FSM
V
F
TJ. TSTG
LIMIT
400
UNIT
W
See next table
1.5
40
A
W
A
V
°C
3.5/5.0
-5510 + 175
Notes
(
1
> Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
P) 8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
<
3
> V
F
= 3.5 V for P4KE220A and below; V
F
= 5.0 V for P4KE250A and above
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