MBRF30H150CTG,
MBR30H150CTG
SWITCHMODE™
Power Rectifier
150 V, 30 A
Features and Benefits
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•
•
•
•
•
•
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capability
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
These are Pb−Free Devices
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 150 VOLTS
1
2, 4
3
Applications
•
Power Supply
−
Output Rectification
•
Power Management
•
Instrumentation
Mechanical Characteristics:
MARKING
DIAGRAMS
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220 & TO−220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
AYWW
B30H150G
TO−220 FULLPAK]
AKA
CASE 221D
STYLE 3
1
2
3
4
TO−220AB
CASE 221A
STYLE 6
1
2
AYWW
B30H150G
AKA
3
A
Y
WW
B30H150
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
March, 2010
−
Rev. 1
1
Publication Order Number:
MBRF30H150CT/D
MBRF30H150CTG, MBR30H150CTG
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
) T
C
= 124°C
(Per Leg)
(Per Device)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
T
stg
dv/dt
Machine Model = C
Human Body Model = 3B
Value
150
Unit
V
15
30
200
−20
to +150
−65
to +150
10,000
> 400
> 8000
A
A
°C
°C
V/ms
V
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
R
)
ESD Ratings:
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
(MBR30H150CTG)
(MBRF30H150CTG)
−
Junction−to−Case
−
Junction−to−Ambient
−
Junction−to−Case
Symbol
R
qJC
R
qJA
R
qJC
Value
2.0
45
2.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 5 A, T
C
= 25°C)
(I
F
= 5 A, T
C
= 125°C)
(I
F
= 15 A, T
C
= 25°C)
(I
F
= 15 A, T
C
= 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25°C)
(Rated DC Voltage, T
C
= 125°C)
Symbol
v
F
Typ
0.69
0.55
0.98
0.68
Max
0.75
0.60
1.11
0.73
60
50
Unit
V
i
R
mA
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
MBRF30H150CTG
MBR30H150CTG
Package Type
TO−220FP
(Pb−Free)
TO−220
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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2
MBRF30H150CTG, MBR30H150CTG
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
T
J
= 125°C
10
T
J
= 100°C
T
J
= 25°C
100
T
J
= 125°C
10
T
J
= 100°C
T
J
= 25°C
1
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−02
T
J
= 125°C
I
R
, REVERSE CURRENT (A)
1.0E−03
1.0E−04
1.0E−05
T
J
= 25°C
1.0E−06
T
J
= 100°C
1.0E−01
T
J
= 125°C
I
R
, REVERSE CURRENT (A)
1.0E−02
1.0E−03
1.0E−04
1.0E−05
T
J
= 25°C
T
J
= 100°C
1.0E−06
1.0E−07
0 10 20 30 40 50 60 70 80 90 100110 120130140150
0 10 20 30 40 50 60 70 80 90 100110 120130140150
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
I
F
, AVERAGE FORWARD CURRENT (AMPS)
P
FO
, AVERAGE POWER DISSIPATION
(WATTS)
25
dc
20
15
10
5
0
95
30
T
J
= 150°C
25
20
15
10
5
0
SQUARE
SQUARE WAVE
dc
100 105 110 115 120 125 130 135 140 145 150 155
T
C
, CASE TEMPERATURE (°C)
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRF30H150CTG, MBR30H150CTG
10000
T
J
= 25°C
C, CAPACITANCE (pF)
1000
100
10
0
50
100
150
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
100
D = 0.5
10
0.2
0.1
1
0.05
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
1000
Figure 8. Thermal Response Junction−to−Ambient for MBR30H150CTG
R(t), TRANSIENT THERMAL RESISTANCE
10
1
D = 0.5
0.2
0.1
0.05
0.1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
1000
Figure 9. Thermal Response Junction−to−Case for MBR30H150CTG
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4
MBRF30H150CTG, MBR30H150CTG
R(t), TRANSIENT THERMAL RESISTANCE
10
D = 0.5
1
0.2
0.1
0.05
0.01
P
(pk)
0.01
SINGLE PULSE
0.001
0.000001
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
100
1000
0.1
Figure 10. Thermal Response Junction−to−Case for MBRF30H150CTG
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5
51mcu
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