5962-8956804QUA datasheet, PDF

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5962-8956804QUA: DescriptionFIFO, 4KX9, 50ns, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28; Categorystorage storage; File Size216KB，36 Pages; ManufacturerAtmel (Microchip)

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5962-8956804QUA Overview

FIFO, 4KX9, 50ns, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28

5962-8956804QUA Parametric

Parameter Name	Attribute value
Objectid	2078412561
package instruction	CERAMIC, DIP-28
Reach Compliance Code	unknown
Maximum access time	50 ns
Other features	RETRANSMIT
period time	65 ns
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
memory density	36864 bit
memory width	9
Number of functions	1
Number of terminals	28
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	4KX9
Exportable	NO
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class Q
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	DUAL

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REVISIONS

LTR

DESCRIPTION

Update boilerplate of document. Add devices 06 and 07. Add vendor

CAGE 61772 as source of supply for devices 06 and 07. Editorial

changes throughout.

Changes in accordance with NOR 5962-R187-95

Updated boilerplate to one-part, one-part number format. Added

provisions for the inclusion of radiation-hardened devices. - glg

Drawing updated to reflect current requirements. - glg

Updated boilerplate paragraphs. Added 08 device. ksr

Added packages T and N. Dose rate and total dose numbers were

changed; vendor had not previously shipped radhard devices. ksr

Add devices 9 and 10. ksr

Change the ILI and ILO in Table I for devices 9 and 10. ksr

DATE (YR-MO-DA)

93-11-15

APPROVED

M. A. Frye

95-08-14

00-01-21

01-01-17

01-07-27

02-02-04

03-07-28

03-10-20

M. A. Frye

Raymond Monnin

THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

STANDARD MICROCIRCUIT

DRAWING

THIS DRAWING IS

AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

AMSC N/A

REV00

SHEET

PREPARED BY

Kenneth Rice

CHECKED BY

Ray Monnin

APPROVED BY

Michael. A. Frye

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216

http://www.dscc.dla.mil

DRAWING APPROVAL DATE

08 Nov 1989

REVISION LEVEL

MICROCIRCUITS, MEMORY,

DIGITAL, CMOS, 4K X 9 FIFO,

MONOLITHIC SILICON

SIZE

SHEET

1 OF

5962-E008-04

CAGE CODE

67268

5962-89568

DSCC FORM 2233

APR 97

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

HANDBOOKS

DEPARTMENT OF DEFENSE

MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's).

MIL-HDBK-780 - Standard Microcircuit Drawings.

2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DODISS

cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the

documents cited in the solicitation.

AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)

ASTM Standard F1192M-95

Standard Guide for the Measurement of Single Event Phenomena from

Heavy Ion Irradiation of Semiconductor Devices.

(Applications for copies of ASTM publications should be addressed to the American Society for Testing and Materials,

1916 Race Street, Philadelphia, PA 19103).

ELECTRONICS INDUSTRIES ASSOCIATION (EIA)

JEDEC Standard EIA/JESD78

IC Latch-Up Test.

(Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA

22201.)

(Non-Government standards and other publications are normally available from the organizations that prepare or distribute

the documents. These documents also may be available in or through libraries or other informational services.)

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing shall take precedence. Nothing in this document, however, supersedes applicable laws and regulations unless

a specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-

38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in

the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M

shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3.

3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document

revision level control and shall be made available to the preparing and acquiring activity upon request.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table I.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-89568

SHEET

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space

limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the

RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.

Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required

in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see

6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535

and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or

for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain

the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 41 (see MIL-PRF-38535, appendix A).

4. QUALITY ASSURANCE PROVISIONS

4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with

MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan

shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be

in accordance with MIL-PRF-38535, appendix A.

4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted

on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in

accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.

4.2.1 Additional criteria for device class M.

a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical

parameters of method 5004 and substitute lines 1 through 6 of table IIA herein.

b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made

available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and

power dissipation, as applicable, in accordance with the intent specified in test method 1015.

(1)

Dynamic burn-in (method 1015 of MIL-STD-883, test condition C or D; for circuit, see 4.2.1b herein).

c. Interim and final electrical parameters shall be as specified in table IIA herein.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-89568

SHEET

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