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S25FL002D0FNFI011

Description
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
Categorystorage    storage   
File Size479KB,38 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Environmental Compliance
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S25FL002D0FNFI011 Overview

2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface

S25FL002D0FNFI011 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSON
package instructionHVSON,
Contacts8
Reach Compliance Codecompli
ECCN code3A991.B.1.B.1
Maximum clock frequency (fCLK)25 MHz
JESD-30 codeR-PDSO-N8
JESD-609 codee3
length6 mm
memory density2097152 bi
Memory IC TypeFLASH
memory width1
Humidity sensitivity level3
Number of functions1
Number of terminals8
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX1
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height0.75 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width4.9 mm
Base Number Matches1
S25FL Family (Serial Peripheral Interface)
S25FL002D, S25FL001D
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory
with 25 MHz SPI Bus Interface
PRELIMINARY
INFORMATION
Distinctive Characteristics
ARCHITECTURAL ADVANTAGES
Single power supply operation
— Full voltage range: 2.7 to 3.6 V read and program
operations
Memory Architecture
— 2 Mb – Four sectors with 512 Kb each
— 1 Mb – Four sectors with 256 Kb each
Program
— Page Program (up to 256 bytes) in 6 ms (typical)
— Program cycles are on a page by page basis
Erase
— 0.25 s typical sector erase time (S25FL001D)
— 0.5 s typical sector erase time (S25FL002D)
— 1.0 s typical bulk erase time (S25FL001D)
— 2.0 s typical bulk erase time (S25FL002D)
Endurance
— 100,000 cycles per sector typical
Data Retention
— 20 years typical
Device ID
— Electronic signature
Process Technology
— Manufactured on 0.25 µm process technology
Package Option
— Industry Standard Pinouts
— 150 mil 8-pin SO package for 1Mb and 2Mb
— 208 mil 8-pin SO package for 2Mb only
— 8-contact WSON leadless package (6x5 mm)
PERFORMANCE CHARACTERISTICS
Speed
— 25 MHz clock rate (maximum)
Power Saving Standby Mode
— Standby Mode 1 µA (typical)
Memory Protection Features
Memory Protection
— W# pin works in conjunction with Status Register Bits
to protect specified memory areas
— Status Register Block Protection bits (BP1, BP0) in
status register configure parts of memory as read-
only
SOFTWARE FEATURES
SPI Bus Compatible Serial Interface
Publication Number
30167
Revision
A
Amendment
+1
Issue Date
June 9, 2004
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