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BUK446-800B

Description
PowerMOS transistor
Categorysemiconductor    Discrete semiconductor   
File Size62KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BUK446-800B Overview

PowerMOS transistor

INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
BUK445-800A/B
DESCRIPTION
·2A,
800V
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
Majority Carrier Device
Related Literature
APPLICATIONS
·use
in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain
Current-continuous
@ TC=37℃
BUK446-800A
BUK446-800B
VALUE
800
±30
2.0
1.7
30
150
150
UNIT
V
V
A
W
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
4.16
55
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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Description PowerMOS transistor PowerMOS transistor
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