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MUR2051CT

Description
20 A, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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MUR2051CT Overview

20 A, SILICON, RECTIFIER DIODE, TO-220AB

R
MURF2020CT THRU MURF2060CT
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 20.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
JF
MURF2020CT
High temperature soldering guaranteed:260
°
C/10 seconds,
0.25"(6.35mm)from case
0.177(4.50)
Component in accordance to RoHS 2011
/
65
/
EU
0.138(3.50)
0.056(1.43)
0.043(1.10)
0.410(10.41)
0.390(9.91)
ITO-220AB
0.140(3.55)
0.128(3.25)
DIA
0.111(2.83)
0.101(2.57)
0.272(6.90)
0.256(6.50)
0.187(4.75)
0.167(4.25)
0.130(3.31)
0.111(2.81)
1
PIN
2
3
1.161(29.5)
1.083(27.5)
0.110(2.80)
0.551(14.00)
0.512(13.00)
0.102(2.60)
0.067(1.70)
0.059(1.50)
MECHANICAL DATA
Case: JEDEC ITO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked.
Mounting Position: Any
0.029(0.73)
0.019(0.47)
0.104(2.64)
0.096(2.44)
0.029(0.73)
0.019(0.47)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Per leg
Total device
MURF
2020CT
200
140
200
MURF
2040CT
400
280
400
10.0
20.0
150.0
150
MURF
2060CT
600
420
600
Units
V
olts
V
olts
V
olts
A
mps
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
θJC
T
J
T
STG
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 10.0 A per leg(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T
A
=25
°
C
T
A
=125
°
C
0.975
1.3
5
250
35
2.5
-55 to+150
-55 to+175
1.5
V
olts
μA
ns
°C/W
°C
°C
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
1. Pulse test: 300
μ
s pulse width,1% duty cycle
2. Reverse recovery test conditions I
F
=0.5A,I
R
=1.0A, Irr=0.5A
3. Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
9-36
HTTP
://
WWW.JINGHENGGROUP.COM

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