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S1M

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size532KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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S1M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC

S1M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin/silver
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1 A
S1A THRU S1M
SURFACE MOUNT GENERAL RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
DO-214AC/SMA
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.067 (1.70)
0.051 (1.30)
0.110(2.80)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
MECHANICAL DATA
0.008(0.203)MAX.
0.060(1.52)
0.030(0.76)
0.222(5.66)
0.194(4.93)
Case:
JEDEC DO-214AC molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.002
ounce, 0.07 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=110 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNITS
VOLTS
VOLTS
VOLTS
Amp
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
30.0
1.1
5.0
50.0
15.0
75.0
-50 to +150
Amps
Volts
µ
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

S1M Related Products

S1M S1G S1J S1A S1K S1D S1B
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals 2 2 2 2 - - 2
Number of components 1 1 1 1 - - 1
Processing package description Plastic, SMA, 2 PIN - GREEN, PLASTIC, SMA, 2 PIN ROHS COMPLIANT, PLASTIC, SMB, 2 PIN - - GREEN, PLASTIC, SMA, 2 PIN
Lead-free Yes - Yes Yes - - Yes
EU RoHS regulations Yes - Yes Yes - - Yes
state DISCONTINUED DISCONTINUED ACTIVE ACTIVE - ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle RECTANGULAR - - Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - SMALL OUTLINE
surface mount Yes Yes Yes Yes - - Yes
Terminal form C BEND C BEND C BEND C BEND - - C BEND
terminal coating tin/silver - PURE Tin NOT SPECIFIED - - PURE Tin
Terminal location pair pair pair DUAL - - pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY - - Plastic/Epoxy
structure single single single SINGLE - - single
Diode component materials silicon silicon silicon SILICON - - silicon
Diode type Signal diode Signal diode Signal diode SIGNAL DIODE - SIGNAL DIODE Signal diode
Maximum repetitive peak reverse voltage 1000 V 400 V 600 V 50 V - - 100 V
Maximum average forward current 1 A 1 A 1 A 1 A - - 1 A
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