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US1A

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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US1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC

R
US1A TH R U US1M
GLASS PASSIVATED JUNCTION
HIGH EFFICIENCY RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:1.0Ampere
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Glass passived junction
Low forward voltage drop
High current capability, High reliability
Low power loss, high efficiency
High surge current capability
High speed switching, Low leakage
High temperature soldering guaranteed:260
°
C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
SMA(DO-214AC)
0.114(2.9)
0.100(2.54)
0.065(1.65)
0.049(1.25)
0.181(4.60)
0.157(3.99)
0.096(2.44)
0.078(1.98)
0.060(1.52)
0.030(0.76)
0.008(0.203)
MAX
0.22(5.6)
0.189(4.80)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
Case: JEDEC SMA(DO-214AC) molded plastic body
Terminals: Solder Plated, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Weight: 0.002ounce, 0.064 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
°
C ambient temperature unless otherwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 1.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
US1A
50
35
50
US1B
100
70
100
US1D
200
140
200
US1F
300
210
300
US1G
400
280
400
1.0
US1J
600
420
600
US1K
800
560
800
US1M
1000
700
1000
Units
V
olts
V
olts
V
olts
A
mp
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
30.0
1.30
5.0
50
1.0
1.7
V
olts
μ
A
°C/W
T
A
=125
°
C
Typical Thermal resistance
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
R
θJA
R
θJL
T
rr
C
J
T
J
T
STG
50
15
75
27
75
10
-55 to+150
ns
P
F
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
JINAN JINGHENG ELECTRONICS CO., LTD.
2-1
HTTP
://
WWW.JINGHENGGROUP.COM

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