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MUR2050CT

Description
10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size52KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Download Datasheet Parametric View All

MUR2050CT Overview

10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

MUR2050CT Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionTO-220AB, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationULTRA FAST RECOVERY 高 POWER
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current100 A
R
MUR2020CT THRU MUR2060CT
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 20.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
JF
MUR2020CT
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260
°
C/10 seconds,
0.25"(6.35mm)from case
Component in accordance to RoHS 2011
/
65
/
EU
TO-220AB
0.185(4.70)
0.410(10.41)
0.390(9.91)
0.140(4.10)
0.147(3.74)
DIA
0.114(2.90)
0.102(2.60)
0.283(7.20)
0.244(6.20)
0.175(4.44)
0.055(1.39)
0.045(1.14)
1
0.159(4.05)
0.138(3.50)
0.053(1.34)
0.047(1.20)
PIN
2
3
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.516(13.10)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.023(0.58)
0.014(0.35)
0.114(2.90)
0.098(2.50)
MECHANICAL DATA
Case: JEDEC TO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
0.208(5.28)
0.192(4.88)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
MUR
2020CT
200
140
200
MUR
2040CT
400
280
400
10.0
20.0
150.0
150
0.975
1.3
5
250
35
2.5
-55 to+150
-55 to+150
MUR
2060CT
600
420
600
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Per leg
Total device
Units
V
olts
V
olts
V
olts
A
mps
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
θJC
T
J
T
STG
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 10.0 A per leg(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T
A
=25
°
C
T
A
=125
°
C
1.7
V
olts
μA
ns
°C/W
°C
°C
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
1. Pulse test: 300
μ
s pulse width,1% duty cycle
2. Reverse recovery test conditions I
F
=0.5A,I
R
=1.0A, Irr=0.25A
3. Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
9-34
HTTP
://
WWW.JINGHENGGROUP.COM

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