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S1Q

Description
1 A, 1200 V, SILICON, SIGNAL DIODE, DO-215AA
Categorysemiconductor    Discrete semiconductor   
File Size184KB,1 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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S1Q Overview

1 A, 1200 V, SILICON, SIGNAL DIODE, DO-215AA

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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S1Q
THRU
S1ZZ
1 Amp
Silicon Rectifier
1200 to 2000 Volts
DO-214AA
(SMBJ) (Round Lead)
H
Cathode Band
For Surface Mount Applications
Extremely Low Thermal Resistance
High Temp Soldering: 250°C for 10 Seconds At Terminals
Easy Pick And Place
Gull Wing Lead Bend To Prevent Arcing
Perfect For Ballast, Television And Monitor Applications
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 15°C/W Junction To Lead
MCC
Part
Number
S1Q
S1V
S1Y
S1Z
S1ZZ
Device
Marking
S1Q
S1V
S1Y
S1Z
S1ZZ
Maximum
Recurrent
Peak Reverse
Voltage
1200V
1400V
1600V
1800V
2000V
I
F(AV)
I
FSM
1.0A
30A
Maximum
RMS
Voltage
840V
980V
1120V
1260V
1400V
Maximum
DC
Blocking
Voltage
1200V
1400V
1600V
1800V
2000V
J
A
E
F
G
DIMENSIONS
C
D
lectrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
T
J
= 75°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
J
B
V
F
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
1.10V
I
FM
= 1.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 125°C
INCHES
MIN
.078
.075
.002
-----
.035
.065
.205
.160
.130
MAX
.116
.089
.008
.02
.055
.091
.224
.180
.155
MM
MIN
1.98
1.90
.05
-----
.90
1.65
5.21
4.06
3.30
MAX
2.95
2.25
.20
.51
1.40
2.32
5.69
4.57
3.94
NOTE
I
R
10.0µA
30µA
SUGGESTED SOLDER
PAD LAYOUT
0.090"
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Typical Junction
C
J
15pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
T
rr
1.8u s
0.085”
0.070”
www.mccsemi.com

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