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DB106

Description
1 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size338KB,2 Pages
ManufacturerSUNTAN
Websitehttp://www.suntan.com.hk/
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DB106 Overview

1 A, SILICON, BRIDGE RECTIFIER DIODE

Suntan Su
®
®
DB101 THRU DB107
Single Phase 1.0 AMPS. Glass Passivated Bridge Rectifiers
Voltage Range 50 to 1000 Volts
Current 1.0 Amperes
FEATU R E S
◆Ideal
for printed circuit board
◆Reliable
low cost construction technique
results in inexpensive product
◆High
temperature soldering guaranteed:
260℃ / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
◆UL
Recognized File number: E347215
MECHANICAL DATA
◆Case:
Molded plastic
◆Lead:
solder plated
◆Polarity:
As marked
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
DB101
DB102
DB103
DB104
DB105
DB106
DB107
UNITS
V
V
V
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Maximum Average Forward Rectified Current
at T
A
=40℃
Peak Forward Surge Current,
8.3ms Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current @ T
A
=25℃
rated DC blocking voltage per leg T
A
=125℃
A
I
FSM
V
F
I
R
R
θJA
R
θJL
T
J
T
STG
50
A
1.1
10
500
40
15
-55 to +150
-55 to +150
V
μA
Typical Thermal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
/W
Note:
Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B.with 0.47×0.47”(12×12mm) Copper Pads.
1

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Description 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE
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