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S3A

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size351KB,4 Pages
ManufacturerTM Technology, Inc.
Websitehttp://www.tmtech.com.tw/
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S3A Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB

S3A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMCJ, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current100 A
S3A - S3M
Taiwan Semiconductor
CREAT BY ART
3A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High current capability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AB (SMC)
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A
Maximum reverse current @ rated V
R
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
S3A
50
35
50
S3B
100
70
100
S3D
200
140
200
S3G
400
280
400
3
100
1.15
10
250
1.5
60
13
47
- 55 to +150
- 55 to +150
S3J
600
420
600
S3K S3M
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
V
μA
μs
pF
°C/W
°C
°C
Document Number: DS_D1410016
Version: K15

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Description 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 400 V, SILICON, RECTIFIER DIODE
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