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S3G

Description
3 A, 400 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size351KB,4 Pages
ManufacturerTM Technology, Inc.
Websitehttp://www.tmtech.com.tw/
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S3G Overview

3 A, 400 V, SILICON, RECTIFIER DIODE

S3G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current100 A
S3A - S3M
Taiwan Semiconductor
CREAT BY ART
3A, 50V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High current capability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AB (SMC)
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A
Maximum reverse current @ rated V
R
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
S3A
50
35
50
S3B
100
70
100
S3D
200
140
200
S3G
400
280
400
3
100
1.15
10
250
1.5
60
13
47
- 55 to +150
- 55 to +150
S3J
600
420
600
S3K S3M
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
V
μA
μs
pF
°C/W
°C
°C
Document Number: DS_D1410016
Version: K15

S3G Related Products

S3G S3M S3K S3J S3A_16 S3A S3B S3D
Description 3 A, 400 V, SILICON, RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB
state DISCONTINUED ACTIVE - ACTIVE ACTIVE ACTIVE ACTIVE -
Diode type rectifier diode rectifier diode - RECTIFIER DIODE rectifier diode rectifier diode RECTIFIER DIODE -
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