S1K datasheet, PDF - EEWORLD Datasheet

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S1K: Description1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size69KB，2 Pages; ManufacturerGE Sensing ( Amphenol Advanced Sensors ); Websitehttp://www.vishay.com/

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S1K Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

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S1A THRU S1M

SURFACE MOUNT RECTIFIER

Reverse Voltage -

50 to 1000 Volts

DO-214AC

Forward Current -

1.0 Ampere

FEATURES

♦

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦

For surface mounted applications

♦

Low profile package

♦

Built-in strain relief, ideal for

automated placement

♦

Glass passivated chip junction

♦

High temperature soldering:

250°C/10 seconds at terminals

0.065 (1.65)

0.049 (1.25)

0.110 (2.79)

0.100 (2.54)

0.177 (4.50)

0.157 (3.99)

0.012 (0.305)

0.006 (0.152)

0.090 (2.29)

0.078 (1.98)

MECHANICAL DATA

Case:

JEDEC DO-214AC molded plastic over

passivated chip

Terminals:

Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity:

Color band denotes cathode end

Weight:

0.002 ounce, 0.064 gram

0.060 (1.52)

0.030 (0.76)

0.008 (0.203) MAX.

0.208 (5.28)

0.194 (4.93)

Dimensions are in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

S1A

S1B

S1D

S1G

S1J

S!K

S1M

UNITS

Device marking code

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

See Figure 1

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method) T

=110°C

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at Rated DC blocking voltage

Typical reverse recovery time

(NOTE 1)

Typical junction capacitance

(NOTE 2)

Typical thermal resistance

(NOTE 3)

Operating junction and storage temperature range

=25°C

=125°C

RRM

RMS

VDC

(AV)

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

1000

Volts

Amp

FSM

ΘJA

ΘJL

, T

STG

40.0

1.10

1.0

50.0

1.8

12.0

75.0

27.0

-55 to +150

30.0

Amps

Volts

5.0

µA

µs

85.0

30.0

°C/W

°C

NOTES:

(1) Reverse recovery test conditions: I

=0.5A, I

=1.0A, I

=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient and from junction to lead mounted on

0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

4/98

S1K Related Products

	S1K	S1M	S1J	S1G	S1D	S1B	S1A
Description	1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 400 V, SILICON, SIGNAL DIODE	SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA
Number of terminals	-	2	2	2	-	2	2
Number of components	-	1	1	1	-	1	1
Processing package description	-	Plastic, SMA, 2 PIN	GREEN, PLASTIC, SMA, 2 PIN	-	-	GREEN, PLASTIC, SMA, 2 PIN	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Lead-free	-	Yes	Yes	-	-	Yes	Yes
EU RoHS regulations	-	Yes	Yes	-	-	Yes	Yes
state	-	DISCONTINUED	ACTIVE	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE
packaging shape	-	Rectangle	Rectangle	Rectangle	-	Rectangle	RECTANGULAR
Package Size	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
surface mount	-	Yes	Yes	Yes	-	Yes	Yes
Terminal form	-	C BEND	C BEND	C BEND	-	C BEND	C BEND
terminal coating	-	tin/silver	PURE Tin	-	-	PURE Tin	NOT SPECIFIED
Terminal location	-	pair	pair	pair	-	pair	DUAL
Packaging Materials	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	PLASTIC/EPOXY
structure	-	single	single	single	-	single	SINGLE
Diode component materials	-	silicon	silicon	silicon	-	silicon	SILICON
Diode type	-	Signal diode	Signal diode	Signal diode	SIGNAL DIODE	Signal diode	SIGNAL DIODE
Maximum repetitive peak reverse voltage	-	1000 V	600 V	400 V	-	100 V	50 V
Maximum average forward current	-	1 A	1 A	1 A	-	1 A	1 A

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