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S1D

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size69KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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S1D Overview

SIGNAL DIODE

S1D Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
S1A THRU S1M
SURFACE MOUNT RECTIFIER
Reverse Voltage -
50 to 1000 Volts
DO-214AC
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief, ideal for
automated placement
Glass passivated chip junction
High temperature soldering:
250°C/10 seconds at terminals
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.090 (2.29)
0.078 (1.98)
MECHANICAL DATA
Case:
JEDEC DO-214AC molded plastic over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.002 ounce, 0.064 gram
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
S1A
SA
S1B
SB
S1D
SD
S1G
SG
S1J
SJ
S!K
SK
S1M
SM
UNITS
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
See Figure 1
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=110°C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at Rated DC blocking voltage
Typical reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
T
A
=25°C
T
A
=125°C
V
RRM
V
RMS
VDC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
40.0
1.10
1.0
50.0
1.8
12.0
75.0
27.0
-55 to +150
30.0
Amps
Volts
5.0
µA
µs
pF
85.0
30.0
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on
0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
4/98

S1D Related Products

S1D S1M S1K S1J S1G S1B S1A
Description SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA
state ACTIVE DISCONTINUED - ACTIVE DISCONTINUED ACTIVE ACTIVE
Diode type SIGNAL DIODE Signal diode - Signal diode Signal diode Signal diode SIGNAL DIODE
Number of terminals - 2 - 2 2 2 2
Number of components - 1 - 1 1 1 1
Processing package description - Plastic, SMA, 2 PIN - GREEN, PLASTIC, SMA, 2 PIN - GREEN, PLASTIC, SMA, 2 PIN ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Lead-free - Yes - Yes - Yes Yes
EU RoHS regulations - Yes - Yes - Yes Yes
packaging shape - Rectangle - Rectangle Rectangle Rectangle RECTANGULAR
Package Size - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount - Yes - Yes Yes Yes Yes
Terminal form - C BEND - C BEND C BEND C BEND C BEND
terminal coating - tin/silver - PURE Tin - PURE Tin NOT SPECIFIED
Terminal location - pair - pair pair pair DUAL
Packaging Materials - Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY
structure - single - single single single SINGLE
Diode component materials - silicon - silicon silicon silicon SILICON
Maximum repetitive peak reverse voltage - 1000 V - 600 V 400 V 100 V 50 V
Maximum average forward current - 1 A - 1 A 1 A 1 A 1 A
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