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MTB080P06M3-0-T2-G

Description
P-Channel Enhancement Mode MOSFET
File Size383KB,9 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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MTB080P06M3-0-T2-G Overview

P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
-60V P-Channel Enhancement Mode MOSFET
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 1/9
MTB080P06M3
Features
Single Drive Requirement
Ultra High Speed Switching
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=-10V, T
A
=25°C
R
DSON
@V
GS
=-10V, I
D
=-3A
R
DSON
@V
GS
=-4.5V, I
D
=-3A
-60V
-3.2A
83mΩ(typ.)
112mΩ(typ.)
Symbol
MTB080P06M3
Outline
SOT-89
G:Gate
S:Source
D:Drain
G D
D S
Ordering Information
Device
MTB080P06M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 : 1000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06M3
CYStek Product Specification

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MTB080P06M3-0-T2-G MTB080P06M3
Description P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET
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