CYStech Electronics Corp.
-60V P-Channel Enhancement Mode MOSFET
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 1/9
MTB080P06M3
Features
•
Single Drive Requirement
•
Ultra High Speed Switching
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=-10V, T
A
=25°C
R
DSON
@V
GS
=-10V, I
D
=-3A
R
DSON
@V
GS
=-4.5V, I
D
=-3A
-60V
-3.2A
83mΩ(typ.)
112mΩ(typ.)
Symbol
MTB080P06M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
G D
D S
Ordering Information
Device
MTB080P06M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 : 1000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06M3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Limits
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 2/9
Unit
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Continuous Drain Current @ T
A
=25°C
I
D
Continuous Drain Current @ T
A
=70°C
Pulsed Drain Current
I
DM
P
D
Total Power Dissipation (T
A
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board
*3. Pulse width≤300μs, duty cycle≤2%
-60
±20
-3.2
-2.6
-18
*1, 3
2
*2
0.02
-55~+150
V
A
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-a
Value
62.5
*
Unit
°C/W
*
Surface mounted on 1 in² copper pad of FR-4 board; 270
°C/W
when mounted on min. copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
G
FS
I
GSS
I
DSS
*R
DS(ON)
Dynamic
Ciss
Coss
Crss
*t
d(ON)
*t
r
*t
d(OFF)
*t
f
MTB080P06M3
Min.
-60
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.05
-
10
-
-
-
83
112
498
48
38
6.9
17.4
29.2
14.8
Max.
-
-
-2.5
-
±
100
-1
-25
110
150
-
-
-
-
-
-
-
Unit
V
V/°C
V
S
nA
μA
mΩ
Test Conditions
V
GS
=0V, I
D
=-250μA
Reference to 25°C, I
D
=-1mA
V
DS
=V
GS
, I
D
=-250μA
V
DS
=-5V, I
D
=-3A
V
GS
=
±
20V, V
DS
=0V
V
DS
=-48V, V
GS
=0V
V
DS
=-48V, V
GS
=0V (Tj=70
°C)
I
D
=-3A, V
GS
=-10V
I
D
=-3A, V
GS
=-4.5V
pF
V
DS
=-30V, V
GS
=0V, f=1MHz
ns
V
DS
=-30V, I
D
=-1A, V
GS
=-10V, R
G
=6
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Source-Drain Diode
*V
SD
*trr
*Qrr
-
-
-
-
-
-
11
1.7
2.4
-0.81
10.6
6.4
-
-
-
-1.2
-
-
nC
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 3/9
V
DS
=-30V, I
D
=-3A, V
GS
=-10V
V
ns
nC
V
GS
=0V, I
S
=-2A
I
F
=-2A, V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended soldering footprint
MTB080P06M3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
18
16
-I
D
, Drain Current (A)
14
12
10
8
6
4
2
0
0
2
4
6
8
-V
DS
, Drain-Source Voltage(V)
10
0.6
-75 -50 -25
-3.5V
V
GS
=-3V
-4.5V
-4V
-10V, -9V,-8V,-7V,-6V,-5.5V,-5V
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 4/9
Normalized Brekdown Voltage vs Ambient
Temperature
1.4
1.2
1
0.8
I
D
=-250μA,
V
GS
=0V
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1.2
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
-V
SD
, Source-Drain Voltage(V)
1
0.8
0.6
0.4
0.2
Tj=25°C
V
GS
=-4.5V
100
V
GS
=-10V
Tj=150°C
10
0.1
1
-I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
0
2
4
6
8
-I
S
, Source Drain Current(A)
10
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
2.2
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
R
DS(ON)
@Tj=25°C : 83mΩ typ.
V
GS
=-10V, I
D
=-3A
500
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
450
400
350
300
250
200
150
100
50
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
I
D
=-3A
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080P06M3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
,
Normalized Threshold Voltage
10000
1.6
1.4
1.2
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 5/9
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance---(pF)
1000
Ciss
I
D
=-1mA
1
0.8
0.6
0.4
0.2
I
D
=-250μA
100
C
oss
Crss
10
0
5
10
15
20
25
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
10
8
6
4
2
Gate Charge Characteristics
-V
GS
, Gate-Source Voltage(V)
10
V
DS
=-30V
V
DS
=-15V
1
V
DS
=-10V
Pulsed
T
A
=25°C
V
DS
=-48V
0.1
I
D
=-3A
0.01
0.001
0
0.01
0.1
1
-I
D
, Drain Current(A)
10
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Safe Operating Area
100
-I
D
, Maximum Drain Current(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1
10
100
-V
DS
, Drain-Source Voltage(V)
1000
25
Maximum Drain Current vs Junction Temperature
-I
D
, Drain Current(A)
10
100μs
1ms
1
10ms
0.1
T
A
=25°C, Tj=150°C, V
GS
=-10V
R
θ
JA
=62.5°C/W, Single Pulse
100ms
1s
DC
T
A
=25°C, V
GS
=-10V, R
θ
JA
=62.5°C/W
0.01
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTB080P06M3
CYStek Product Specification
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