Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
V
DS
I
D
I
D
I
G
RBSOA
SCSOA
V
SG
V
SD
P
tot
T
stg
Conditions
V
GS
= 0 V
T
C
= 25°C
T
C
> 125°C
T
VJ
= 175
o
C,
Clamped Inductive Load
T
VJ
= 175
o
C, I
G
= 1 A, V
DS
= 1200 V,
Non Repetitive
Value
1700
45
20
1.3
I
D,max
= 16
@ V
DS
≤ V
DSmax
>20
30
25
282 / 37
-55 to 175
Unit
V
A
A
A
A
µs
V
V
W
°C
Notes
Fig. 17
Fig. 17
Fig. 19
T
C
= 25 °C / 155 °C, t
p
> 100 ms
Fig. 16
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Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
Min.
Value
Typical
Max.
Unit
Notes
A:
On State
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
R
DS(ON)
V
GS,SAT
h
FE
I
D
= 20 A, T
j
= 25 °C
I
D
= 20 A, T
j
= 150 °C
I
D
= 20 A, T
j
= 175 °C
I
D
= 20 A, I
D
/I
G
= 40, T
j
= 25 °C
I
D
= 20 A, I
D
/I
G
= 30, T
j
= 175 °C
V
DS
= 8 V, I
D
= 20 A, T
j
= 25 °C
V
DS
= 8 V, I
D
= 20 A, T
j
= 125 °C
V
DS
= 8 V, I
D
= 20 A, T
j
= 175 °C
50
93
109
3.44
3.24
100
62
56
mΩ
V
–
Fig. 4
Fig. 7
Fig. 5
B: Off State
Drain Leakage Current
Gate Leakage Current
I
DSS
I
SG
V
DS
= 1700 V, V
GS
= 0 V, T
j
= 25 °C
V
DS
= 1700 V, V
GS
= 0 V, T
j
= 150 °C
V
DS
= 1700 V, V
GS
= 0 V, T
j
= 175 °C
V
SG
= 20 V, T
j
= 25 °C
0.1
0.5
3
20
μA
nA
Fig. 8
C: Thermal
Thermal resistance, junction - case
R
thJC
0.53
°C/W
Fig. 20
Section III: Dynamic Electrical Characteristics
Parameter
Symbol
Conditions
Value
Typical
Unit
Notes
Min.
Max.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
C
iss
C
rss
/C
oss
E
OSS
C
oss,tr
C
oss,er
Q
GS
Q
GD
Q
G
V
GS
= 0 V, V
DS
= 1200 V,
f
= 1 MHz
V
DS
= 1200 V,
f
= 1 MHz
V
GS
= 0 V, V
DS
= 1200 V,
f
= 1 MHz
I
D
= constant, V
GS
= 0 V, V
DS
= 0…1200 V
V
GS
= 0 V, V
DS
= 0…1200 V
V
GS
= -5…3 V
V
GS
= 0 V, V
DS
= 0…1200 V
3078
51
42
85
62
23
103
126
pF
pF
µJ
pF
pF
nC
nC
nC
Fig. 9
Fig. 9
Fig. 10
B: Switching
1
Internal Gate Resistance – zero bias
Internal Gate Resistance – ON
Turn On Delay Time
Fall Time, V
DS
Turn Off Delay Time
Rise Time, V
DS
Turn On Delay Time
Fall Time, V
DS
Turn Off Delay Time
Rise Time, V
DS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
1
DS
R
G(INT-ZERO)
V = 0 V, T
AC
175 ºC
GS
j
=
R
G(INT-ON)
V
GS
> 2.5 V, V
DS
= 0 V, T
j
= 175 ºC
t
d(on)
T
j
= 25 ºC, V
DS
= 1200 V,
t
f
I
D
= 16 A, Resistive Load
Refer to Section V for additional
t
d(off)
driving information.
t
r
t
d(on)
t
f
T
j
= 175 ºC, V
DS
= 1200 V,
I
D
= 16 A, Resistive Load
t
d(off)
t
r
E
on
T
j
= 25 ºC, V
DS
= 1200 V,
I
D
= 16 A, Inductive Load
E
off
Refer to Section V.
E
tot
E
on
T
j
= 175 ºC, V
DS
= 1200 V,
E
off
I
D
= 16 A, Inductive Load
E
tot
f
= 1 MHz, V
= 50 mV, V
= 0 V,
1.7
0.13
13
18
27
14
15
16
35
12
451
52
503
426
37
463
Ω
Ω
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
Fig. 11, 13
Fig. 12, 14
Fig. 11
Fig. 12
Fig. 11, 13
Fig. 12, 14
Fig. 11
Fig. 12
– All times are relative to the Drain-Source Voltage V
DS
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Section IV: Figures
A: Static Characteristics
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 150 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: On-Resistance vs. Gate Current
Figure 5: DC Current Gain and Normalized On-Resistance
vs. Temperature
Figure 6: DC Current Gain vs. Drain Current
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Figure 7: Typical Gate
–
Source Saturation Voltage
Figure 8: Typical Blocking Characteristics
B: Dynamic Characteristics
Figure 9: Input, Output, and Reverse Transfer Capacitance
Figure 10: Energy Stored in Output Capacitance
Figure 11: Typical Switching Times and Turn On Energy
Losses vs. Temperature
Figure 12: Typical Switching Times and Turn Off Energy
Losses vs. Temperature
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Figure 13: Typical Switching Times and Turn On
Energy Losses vs. Drain Current
Figure 14: Typical Switching Times and Turn Off
Energy Losses vs. Drain Current
C: Current and Power Derating
Figure 15: Typical Hard Switched Device Power Loss vs.
2
Switching Frequency
Figure 16: Power Derating Curve
Figure 17: Drain Current Derating vs. Temperature
2
Figure 18: Forward Bias Safe Operating Area at T
c
= 25 C
o
– Representative values based on device conduction and switching loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Jan 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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