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UF5407G

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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UF5407G Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

R
UF5401 G TH R U UF5408 G
HIGH EFFICIENCY RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:3.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low forward voltage drop
High current capability, High reliability
Low power loss, high efficiency
High surge current capability
High speed switching, Low leakage
High temperature soldering guaranteed:260
°
C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
DO-201AD
1.0(25.4)
MIN
0.210(5.3)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDED DO-201AD molded plastic body
Lead: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.042ounce, 1.19 grams
0.052(1.32)
0.045(1.14)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25 C ambient temperature unless otherwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum Recurrent peak reverse voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead length at T
A
=55 C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 3.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
UF
UF
UF
5401G 5402G 5403G
50
35
50
100
70
100
200
140
200
UF
UF
UF
UF
UF
5404G 5405G 5406G 5407G 5408G
300
210
300
3.0
400
280
400
600
420
600
800
560
800
1000
700
1000
Units
V
olts
V
olts
V
olts
A
mpS
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
150.0
1.0
1.3
10.0
150
1.7
V
olts
T
A
=100
°
C
μ
A
75
50
ns
P
F
°C
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
T
rr
C
J
T
J
T
STG
50
70
-55 to+150
-55 to+150
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

UF5407G Related Products

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Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

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