SF0R5G43,SF0R5J43
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R5G43,SF0R5J43
LOW POWER SWITCHING AND CONTROL APPLICATIONS
l
Repetitive Peak Off−State Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage
: V
RRM
= 400,600V
l
Average On−State Current
l
Plastic Mold Type.
: I
T (AV)
= 500mA
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
(R
GK
= 1kΩ)
Non−Repetitive Peak
Reverse Voltage
(Non-Repetitive < 5ms,
R
GK
= 1kΩ,
T
j
= 0~110°C)
SF0R5G43
SF0R5J43
SF0R5G43
SF0R5J43
V
RSM
V
DRM
V
RRM
SYMBOL
RATING
400
600
500
720
V
V
UNIT
Average On−State Current
(Half Sine Waveform Tc = 30°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
I
T (AV)
I
T (RMS)
I
TSM
I t
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
500
800
7 (50Hz)
8 (60Hz)
0.25
1
0.01
8
−5
500
−65~125
−65~125
mA
mA
A
A s
W
W
V
V
mA
°C
°C
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO−92
SC−43
13−5A1D
Note:
Should be used with gate resistance as follows.
1
2001-07-10
SF0R5G43,SF0R5J43
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
SYMBOL
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
R
th (j−c)
R
th (j−a)
TEST CONDITION
V
DRM
= V
RRM
= Rated,
R
GK
= 1kΩ, T
j
= 125°C
I
TM
= 1A
V
D
= 6V, R
L
= 100Ω, R
GK
= 1kΩ
V
D
= Rated, R
GK
= 1kΩ,
T
a
= 125°C
R
L
= 100Ω, R
GK
= 1kΩ
Junction to Case
Junction to Ambient
MIN
―
―
―
―
0.2
―
―
―
TYP.
―
―
―
―
―
―
―
―
MAX
50
1.5
0.8
200
―
5
125
230
UNIT
µA
V
V
µA
V
mA
°C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SF0R5G43
SF0R5J43
MARK
F0R5G
F0R5J
*2
Example
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-10