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SF0R5G43

Description
TOSHIBA THYRISTOR SILICON PLANAR TYPE
CategoryAnalog mixed-signal IC    Trigger device   
File Size240KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

SF0R5G43 Overview

TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF0R5G43 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Maximum leakage current0.05 mA
On-state non-repetitive peak current7 A
Number of components1
Number of terminals3
Maximum on-state current500 A
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current0.8 A
Maximum repetitive peak off-state leakage current50 µA
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
SF0R5G43,SF0R5J43
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R5G43,SF0R5J43
LOW POWER SWITCHING AND CONTROL APPLICATIONS
l
Repetitive Peak Off−State Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage
: V
RRM
= 400,600V
l
Average On−State Current
l
Plastic Mold Type.
: I
T (AV)
= 500mA
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
(R
GK
= 1kΩ)
Non−Repetitive Peak
Reverse Voltage
(Non-Repetitive < 5ms,
R
GK
= 1kΩ,
T
j
= 0~110°C)
SF0R5G43
SF0R5J43
SF0R5G43
SF0R5J43
V
RSM
V
DRM
V
RRM
SYMBOL
RATING
400
600
500
720
V
V
UNIT
Average On−State Current
(Half Sine Waveform Tc = 30°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
I
T (AV)
I
T (RMS)
I
TSM
I t
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
500
800
7 (50Hz)
8 (60Hz)
0.25
1
0.01
8
−5
500
−65~125
−65~125
mA
mA
A
A s
W
W
V
V
mA
°C
°C
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO−92
SC−43
13−5A1D
Note:
Should be used with gate resistance as follows.
1
2001-07-10

SF0R5G43 Related Products

SF0R5G43 SF0R5J43
Description TOSHIBA THYRISTOR SILICON PLANAR TYPE TOSHIBA THYRISTOR SILICON PLANAR TYPE
Is it Rohs certified? incompatible incompatible
Maker Toshiba Semiconductor Toshiba Semiconductor
Parts packaging code TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Configuration SINGLE SINGLE
Maximum DC gate trigger current 0.2 mA 0.2 mA
Maximum DC gate trigger voltage 0.8 V 0.8 V
Maximum holding current 5 mA 5 mA
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED 240
Certification status Not Qualified Not Qualified
Maximum rms on-state current 0.8 A 0.8 A
Maximum repetitive peak off-state leakage current 50 µA 100 µA
Off-state repetitive peak voltage 400 V 600 V
Repeated peak reverse voltage 400 V 600 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR
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