SF0R5J43 datasheet, PDF - EEWORLD Datasheet

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SF0R5J43: DescriptionTOSHIBA THYRISTOR SILICON PLANAR TYPE; CategoryAnalog mixed-signal IC Trigger device; File Size240KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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SF0R5J43 Overview

TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF0R5J43 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	240
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Maximum repetitive peak off-state leakage current	100 µA
Off-state repetitive peak voltage	600 V
Repeated peak reverse voltage	600 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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SF0R5G43,SF0R5J43

TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF0R5G43,SF0R5J43

LOW POWER SWITCHING AND CONTROL APPLICATIONS

Repetitive Peak Off−State Voltage : V

DRM

= 400,600V

Repetitive Peak Reverse Voltage

: V

RRM

= 400,600V

Average On−State Current

Plastic Mold Type.

: I

T (AV)

= 500mA

Unit: mm

MAXIMUM RATINGS

CHARACTERISTIC

Repetitive Peak

Off−State Voltage and

Repetitive Peak

Reverse Voltage

= 1kΩ)

Non−Repetitive Peak

Reverse Voltage

(Non-Repetitive < 5ms,

= 1kΩ,

= 0~110°C)

SF0R5G43

SF0R5J43

SF0R5G43

SF0R5J43

RSM

DRM

RRM

SYMBOL

RATING

400

600

500

720

UNIT

Average On−State Current

(Half Sine Waveform Tc = 30°C)

R.M.S On−State Current

Peak One Cycle Surge On−State

Current (Non-Repetitive)

I t Limit Value

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Forward Gate Voltage

Peak Reverse Gate Voltage

Peak Forward Gate Current

Junction Temperature

Storage Temperature Range

T (AV)

T (RMS)

TSM

I t

G (AV)

FGM

RGM

stg

500

800

7 (50Hz)

8 (60Hz)

0.25

0.01

−5

500

−65~125

A s

°C

JEDEC

JEITA

TOSHIBA

Weight: 0.2g

TO−92

SC−43

13−5A1D

Note:

Should be used with gate resistance as follows.

2001-07-10

SF0R5J43 Related Products

	SF0R5J43	SF0R5G43
Description	TOSHIBA THYRISTOR SILICON PLANAR TYPE	TOSHIBA THYRISTOR SILICON PLANAR TYPE
Is it Rohs certified?	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
Configuration	SINGLE	SINGLE
Maximum DC gate trigger current	0.2 mA	0.2 mA
Maximum DC gate trigger voltage	0.8 V	0.8 V
Maximum holding current	5 mA	5 mA
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	240	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified
Maximum rms on-state current	0.8 A	0.8 A
Maximum repetitive peak off-state leakage current	100 µA	50 µA
Off-state repetitive peak voltage	600 V	400 V
Repeated peak reverse voltage	600 V	400 V
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR

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