, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
JL
V.H.F. POWER TRANSISTOR
BFS22A
N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and
military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran-
sistor Is tested under severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a TO-39 metal envelope with the collector connected to the case.
QUICK REFERENCE DATA
R.F. performance up to T
m
t, » 25 °C in an unneutralized common-emitter class-B circuit
mode of operation
c.w.
c.w.
VCE
V
13,5
12,5
f
MHz
175
175
PL
w
4
4
G
P
dB
i?
%
> 60
typ. 60
Z|
SI
3,9 + J2,2
—
VI
mS
37 - j22
—
Dimensions in mm
>
8
typ.8
MECHANICAL DATA
Fig.1 TO-39/1; collector connected to case.
-»H
\e
•«.,« -
mm
Maximum lead diameter is guaranteed only for 12,7 mm.
Accessories: 56245 (distance disc).
.Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice
Int'nrmution lurrmhtd by NJ Somi-C unduclort
n
believed to he hold accurate ami reliable .it the lime of guing to press. However M
-
esptnuibility
fat
my errors or omissions discovered in its use M Scim-iuiKltiUi rs cr
Fit vrrift 'h.M tt:iM-;ht'^t« ir^ . tirn'nt heriire nlncinv unf^n
V.H.F. power transistor
BFS22A
CHARACTERISTICS
Tj = 25°C unless otherwise specified
Collector cut-off current
IB
a
0; VCE = 14V
Breakdown voltages
Collector -base voltage
open emitter, Ic = 1 niA
Collector -emitter voltage
open base, Ic = 10 mA
Emitter -base voltage
open collector, IE = 1 niA
Transient energy
ICEO
5
mA
V(BR)CBO
>
36
18
4
V
V
V
V(BR)CEO >
V(BR)EBO
>
L = 25 mH; f = 50 Hz
open base
D. C. current gain
E
E
0.5
0.5
mS
mS
I
c
= 500 mA; VCE = 5 V
Transition frequency
I
C
= 350 mA; VCE = 10 V
Collector capacitance at f = 1 MHz
f
T
typ.
typ.
<
700
15
20
11
MHz
pF
pF
pF
IE = Ie = 0; VcB = 15 V
Feedback capacitance at f = 1 MHz
1C = 50 mA; VCE - IS V
-C
re
typ.
BFS22A
RATINGS Limitiag values in accordance with the Absolute Maximum System (IEC 134)
Collector -base voltage (open emitter)
peak value
Collector -emitter voltage (open base)
Emitter -base voltage (open collector)
Collector current (average)
Collector current (peak value) f > 1 MHz
Total power dissipation up to
(> 1 MHz
= 25 °C
Ptot
D.C.SOAR |
(A
C
)
VcBOM
max.
max.
max.
max.
max.
36
18
4
2.25
8
7Z60973
V
V
V
A
A
W
VCEO
VEBO
r
C(AV)
max. 0.75
ICM
10
-h
-h
-h
.1
l
.short tlrtio_
operation
V.,S.WR>3"
^
PM
(Wl
7.S
ft
k
&
\
*<
P
1
1
^
VCE « 16--
V
1
>1MHz
0.7
0.6
0.5
v
V
*
(•
\n
**
\
L
\C
OA
0.3
\
^
v
irmal op*i
at
V.
S.W.R.O
0.2
2.5
ni
SO
100T
mb
(°C) 150
5
6
7
8 9 10
V
ce
(V)
20
Storage temperature
Operating junction temperature
THERMAL RESISTANCE
stg
-65
to +200
max.
200
°C
°C
From junction to mounting base
From mounting base to heatsinfc
with a boron nitride washer
for electrical insulation
j-mb
22
K/W
Rthmb-h
=
2.5
K/W
Embedded System
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