SF5G48 datasheet, PDF - EEWORLD Datasheet

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SF5G48: DescriptionTOSHIBA THYRISTOR SILICON PLANAR TYPE; CategoryAnalog mixed-signal IC Trigger device; File Size210KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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SF5G48 Overview

TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF5G48 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Maximum DC gate trigger current	10 mA
Maximum DC gate trigger voltage	1 V
Maximum holding current	40 mA
JESD-30 code	R-PSIP-T3
Maximum leakage current	0.01 mA
On-state non-repetitive peak current	80 A
Number of components	1
Number of terminals	3
Maximum on-state current	5000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	7.8 A
Maximum repetitive peak off-state leakage current	10 µA
Off-state repetitive peak voltage	400 V
Repeated peak reverse voltage	400 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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SF5G48,SF5J48,USF5G48,USF5J48

TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF5G48,SF5J48,USF5G48,USF5J48

MEDIUM POWER CONTROL APPLICATIONS

Repetitive Peak Off−State Voltage : V

DRM

= 400, 600V

Repetitive Peak Reverse Voltage

: V

RRM

= 400, 600V

Average On−State Current

Gate Trigger Current

SF5G48·SF5J48

: I

T (AV)

= 5A

: I

10mA

Max.

Unit: mm

USF5G48·USF5J48

JEDEC

JEITA

TOSHIBA

―

13−10J1B

JEDEC

JEITA

TOSHIBA

―

13−10J2B

Weight: 1.7g

MARKING

MARK

F5G48

F5J48

TYPE

NAME

SF5G48, USF5G48

SF5J48, USF5J48

2001-07-13

SF5G48 Related Products

	SF5G48	SF5J48	USF5G48	USF5J48
Description	TOSHIBA THYRISTOR SILICON PLANAR TYPE	TOSHIBA THYRISTOR SILICON PLANAR TYPE	TOSHIBA THYRISTOR SILICON PLANAR TYPE	TOSHIBA THYRISTOR SILICON PLANAR TYPE
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	unknown	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	10 mA	10 mA	10 mA	10 mA
Maximum DC gate trigger voltage	1 V	1 V	1 V	1 V
Maximum holding current	40 mA	40 mA	40 mA	40 mA
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2
Maximum leakage current	0.01 mA	0.01 mA	0.01 mA	0.01 mA
On-state non-repetitive peak current	80 A	80 A	80 A	80 A
Number of components	1	1	1	1
Number of terminals	3	3	2	2
Maximum on-state current	5000 A	5000 A	5000 A	5000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	7.8 A	7.8 A	7.8 A	7.8 A
Maximum repetitive peak off-state leakage current	10 µA	10 µA	10 µA	10 µA
Off-state repetitive peak voltage	400 V	600 V	400 V	600 V
Repeated peak reverse voltage	400 V	600 V	400 V	600 V
surface mount	NO	NO	YES	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Trigger device type	SCR	SCR	SCR	SCR
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Contacts	-	3	3	3

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