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USF5G48

Description
TOSHIBA THYRISTOR SILICON PLANAR TYPE
CategoryAnalog mixed-signal IC    Trigger device   
File Size210KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

USF5G48 Overview

TOSHIBA THYRISTOR SILICON PLANAR TYPE

USF5G48 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
Shell connectionANODE
ConfigurationSINGLE
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage1 V
Maximum holding current40 mA
JESD-30 codeR-PSSO-G2
Maximum leakage current0.01 mA
On-state non-repetitive peak current80 A
Number of components1
Number of terminals2
Maximum on-state current5000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current7.8 A
Maximum repetitive peak off-state leakage current10 µA
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
SF5G48,SF5J48,USF5G48,USF5J48
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF5G48,SF5J48,USF5G48,USF5J48
MEDIUM POWER CONTROL APPLICATIONS
l
Repetitive Peak Off−State Voltage : V
DRM
= 400, 600V
Repetitive Peak Reverse Voltage
: V
RRM
= 400, 600V
l
Average On−State Current
l
Gate Trigger Current
SF5G48·SF5J48
: I
T (AV)
= 5A
: I
GT
=
10mA
Max.
Unit: mm
USF5G48·USF5J48
JEDEC
JEITA
TOSHIBA
13−10J1B
JEDEC
JEITA
TOSHIBA
13−10J2B
Weight: 1.7g
MARKING
*1
MARK
F5G48
F5J48
TYPE
NAME
SF5G48, USF5G48
SF5J48, USF5J48
*2
1
2001-07-13

USF5G48 Related Products

USF5G48 SF5G48 SF5J48 USF5J48
Description TOSHIBA THYRISTOR SILICON PLANAR TYPE TOSHIBA THYRISTOR SILICON PLANAR TYPE TOSHIBA THYRISTOR SILICON PLANAR TYPE TOSHIBA THYRISTOR SILICON PLANAR TYPE
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknow unknown unknow
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current 10 mA 10 mA 10 mA 10 mA
Maximum DC gate trigger voltage 1 V 1 V 1 V 1 V
Maximum holding current 40 mA 40 mA 40 mA 40 mA
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2
Maximum leakage current 0.01 mA 0.01 mA 0.01 mA 0.01 mA
On-state non-repetitive peak current 80 A 80 A 80 A 80 A
Number of components 1 1 1 1
Number of terminals 2 3 3 2
Maximum on-state current 5000 A 5000 A 5000 A 5000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 7.8 A 7.8 A 7.8 A 7.8 A
Maximum repetitive peak off-state leakage current 10 µA 10 µA 10 µA 10 µA
Off-state repetitive peak voltage 400 V 400 V 600 V 600 V
Repeated peak reverse voltage 400 V 400 V 600 V 600 V
surface mount YES NO NO YES
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Trigger device type SCR SCR SCR SCR
Contacts 3 - 3 3
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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