Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Linear amplifier applications in Television transmitters
and transposers.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119 flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(V
GS
) information is provided for matched pair
applications. Refer to the General Section of Data
Handbook SC19a for further information.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING-SOT119
PIN
1
2
3
4
5
6
SYMBOL
s
s
g
d
s
s
BLF346
DESCRIPTION
source
source
gate
drain
source
source
handbook, halfpage
1
2
d
g
s
3
4
5
6
MAM268
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a linear amplifier.
MODE OF
OPERATION
Class-A
Note
1. Three-tone test method (vision carrier
−8
dB, sound carrier
−7
dB, sideband signal
−16
dB), zero dB corresponds to
peak synchronization level.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 02
2
f
(MHz)
224.25
V
DS
(V)
28
I
D
(A)
3
T
h
(°C)
70
25
P
L
(W)
>24
typ. 30
G
P
(dB)
>14
typ. 16.5
d
im
(dB)
(1)
−52
−52
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DSS
V
GSS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
up to T
mb
= 25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
BLF346
MAX.
65
±20
13
130
150
200
V
V
A
W
UNIT
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
CONDITIONS
T
mb
= 25
°C;
P
tot
= 130 W
T
mb
= 25
°C;
P
tot
= 130 W
VALUE
1.35
0.2
K/W
K/W
UNIT
handbook, halfpage
50
MRA931
handbook, halfpage
200
MGG104
ID
(A)
10
(1)
(2)
Ptot
(W)
150
(2)
100
(1)
1
50
10
−1
1
10
VDS (V)
10
2
0
0
50
100
Th (°C)
150
(1) Current is this area may be limited by R
DSon.
(2) T
mb
= 25
°C.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Oct 02
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GS
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
PARAMETER
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference
of matched pairs
forward transconductance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; V
DS
= 28 V
V
GS
=
±20
V; V
DS
= 0
V
DS
= 10 V; I
D
= 50 mA
V
DS
= 10 V; I
D
= 50 mA
V
DS
= 10 V; I
D
= 5 A
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
−
−
2
−
3
−
−
−
−
−
TYP.
−
−
−
−
−
4.2
0.2
22
225
180
25
BLF346
MAX.
−
2.5
1
4.5
100
−
0.3
−
−
−
−
UNIT
V
mA
µA
V
mV
S
Ω
A
pF
pF
pF
drain-source breakdown voltage V
GS
= 0; I
D
= 50 mA
drain-source on-state resistance V
GS
= 10 V; I
D
= 5 A
handbook, halfpage
2
MGG105
handbook, halfpage
40
MGG106
T.C.
(mV/K)
0
ID
(A)
30
−2
20
−4
10
−6
10
−2
10
−1
1
ID (A)
10
0
0
5
10
15
VGS (V)
20
V
DS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.4
Temperature coefficient of gate-source voltage
as a function of drain current; typical values.
Fig.5
Drain current as a function of gate-source
voltage; typical values.
1996 Oct 02
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
340
handbook, halfpage
RDS on
(mΩ)
MGG107
800
C
(pF)
600
C os
MRA930
280
400
220
200
C is
160
0
30
60
90
120
150
Tj (°C)
0
0
10
20
30
40
VDS (V)
I
D
= 5 A; V
GS
= 10 V.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function
of junction temperature; typical values.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values.
MGG108
handbook, halfpage
300
Crs
(pF)
200
100
0
0
10
20
30
VDS (V)
40
V
GS
= 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values.
1996 Oct 02
5
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