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BY500-100

Description
5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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BY500-100 Overview

5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

BY500-100 THRU BY500-800
SOFT RECOVERY FAST SWITCHING PLASTIC RECTIFIER
Reverse Voltage -
100 to 800 Volts
DO-201AD
Forward Current -
5.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High surge current capability
Fast switching for high efficiency
High forward current operation
at T
L
=45°C
Construction utilizes void-free molded plastic technique
Especially designed for applications such as switch mode
power supplies, inverters, converters, TV scanning,
Ultrasonic-systems, speed controlled DC motors, low
RF interference and free wheeling diode circuits
High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 ounce, 1.1 grams
Dimension are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOLS
BY500-100
BY500-200
BY500-400
BY500-600
BY500-800
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
L
=45°C
Peak forward surge current
10ms single half sine-wave superimposed on
rated load at T
A
=25°C
Maximum repetitive peak forward surge
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current T
A
=25°C
at rated DC blocking voltage T
A
=100°C
Maximum reverse recovery time
(NOTE 1)
Maximum reverse recovery current
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
100
70
100
200
140
200
400
280
400
5.0
600
420
600
800
560
800
Volts
Volts
Volts
Amps
I
FSM
I
FRM
V
F
I
R
t
rr
I
RM(REC)
C
J
R
ΘJA
T
J
T
STG
200.0
10.0
1.35
10.0
1.0
200.0
2.0
28.0
22.0
-50 to +125
-50 to +150
Amps
Amps
Volts
µA
mA
ns
Amps
pF
°C/W
°C
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=1.0A, V
R
=30V, di/dt=50A/µs, I
rr
=10%I
RM
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length with both leads to heat sink
4/98

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BY500-100 BY500-200 BY500-400 BY500-600 BY500-800
Description 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
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