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SM3GZ47

Description
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
CategoryAnalog mixed-signal IC    Trigger device   
File Size208KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

SM3GZ47 Overview

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM3GZ47 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value10 V/us
Maximum DC gate trigger current20 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current30 mA
JESD-30 codeR-PSFM-T3
Maximum leakage current0.02 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current3 A
Maximum repetitive peak off-state leakage current20 µA
Off-state repetitive peak voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC
SM3GZ47,SM3JZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3GZ47,SM3JZ47
AC POWER CONTROL APPLICATIONS
l
Repetitive Peak Off−State Voltage : V
DRM
= 400, 600V
l
R.M.S ON−State Current
: I
T (RMS)
= 3A
l
High Commutating (dv / dt)
l
Isolation Voltage
: V
ISOL
=
1500V
AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM3GZ47
SM3JZ47
SYMBOL
V
DRM
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
V
ISOL
2
RATING
400
600
3
30 (50Hz)
33 (60Hz)
4.5
50
5
0.5
10
2
−40~125
−40~125
1500
UNIT
V
A
A
A s
A / µs
W
W
V
A
°C
°C
V
2
R.M.S On−State Current
(Full Sine Waveform Tc = 110°C)
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I t Limit Value (t = 1~10ms)
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
2
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
13−10H1A
Note 1: di / dt test condition
V
DRM
= 0.5×Rated
I
TM
4.5A
t
gw
10µs
t
gr
250ns
i
gp
= I
GT
×2.0
1
2001-07-13

SM3GZ47 Related Products

SM3GZ47 SM3JZ47
Description TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Toshiba Semiconductor Toshiba Semiconductor
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknown unknown
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Critical rise rate of commutation voltage - minimum value 10 V/us 10 V/us
Maximum DC gate trigger current 20 mA 20 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 30 mA 30 mA
JESD-30 code R-PSFM-T3 R-PSFM-T3
Maximum leakage current 0.02 mA 0.02 mA
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum rms on-state current 3 A 3 A
Maximum repetitive peak off-state leakage current 20 µA 20 µA
Off-state repetitive peak voltage 400 V 600 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type TRIAC TRIAC

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