RSS110N03
Transistor
Switching (30V, ±11A)
RSS110N03
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
External dimensions
(Unit : mm)
SOP8
(8)
5.0±0.2
(5)
6.0±0.3
3.9±0.15
Max.1.75
1.5±0.1
0.15
Applications
Power switching, DC/DC converter.
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
1.27
0.4±0.1
0.1
Each lead has same dimensions
Structure
•Silicon
N-channel MOS FET
Equivalent circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗1
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipatino
Channel temperature
Strage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗
2 Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Limits
30
20
±11
±44
1.6
6.4
2
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
∗1
∗1
∗2
0.5±0.1
(1)
(4)
0.2±0.1
1/3
RSS110N03
Transistor
Thermal resistance
(Ta=25°C)
Parameter
Channel to ambient
∗
Mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C
/ W
∗
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Tum-on delay time
Rise time
Tum-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
−
30
−
1.0
−
−
−
8.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
7.6
10.3
11.2
−
1300
410
250
9
17
60
30
17
3.3
7.1
Max.
10
−
10
2.5
10.4
14.3
15.5
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=±11A, V
GS
=10V
I
D
=±11A, V
GS
=4.5V
I
D
=±11A, V
GS
=4V
I
D
=±11A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=5.5A, V
DD
15V
V
GS
=10V
R
L
=2.73Ω
R
GS
=10Ω
V
DD
15V
V
GS
=5V
I
D
=±11A
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Body diode characteristics
(Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
=6.4A, V
GS
=0V
∗
Electrical characteristic curves
10000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
t
f
t
d (off)
1000
C
iss
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
f=1MHz
V
GS
=0V
10000
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
8
Ta=25°C
7 V
DD
=15V
I
D
=11A
6 R
G
=10Ω
Pulsed
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
100
C
oss
100
C
rss
t
r
10
t
d (on)
1
0.01
10
0.01
0.1
1
10
100
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
2/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
