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PMEG2005CT,215

Description
schottky diodes & rectifiers schottky diode shottky low VF
CategoryDiscrete semiconductor    diode   
File Size148KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PMEG2005CT,215 Overview

schottky diodes & rectifiers schottky diode shottky low VF

PMEG2005CT,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionPLASTIC PACKAGE-3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.33 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage20 V
Maximum reverse recovery time0.022 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
PMEG2005CT
500 mA low V
F
dual MEGA Schottky barrier rectifier
Rev. 2 — 22 June 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic
package.
1.2 Features and benefits
Average forward current: I
F(AV)
0.5 A
Reverse voltage: V
R
20 V
Low forward voltage
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
High-speed switching
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
I
F(AV)
average forward current
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
100
°C
T
sp
130
°C
V
R
V
F
I
R
[1]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
360
30
0.5
0.5
20
390
200
A
A
V
mV
μA
reverse voltage
forward voltage
reverse current
I
F
= 0.5 A
V
R
= 20 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
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