DISCRETE SEMICONDUCTORS
DATA SHEET
BLF546
UHF push-pull power MOS
transistor
Product specification
October 1992
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures
excellent reliability
•
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor designed for
communications transmitter
applications in the UHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT268 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT268
PIN
1
2
3
4
5
DESCRIPTION
drain 1
gate 1
gate 2
drain 2
source
2
Top view
3
handbook, halfpage
1
BLF546
PIN CONFIGURATION
4
d
g
s
g
5
d
MAM395
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
500
V
DS
(V)
28
P
L
(W)
80
G
p
(dB)
>
11
η
D
(%)
>
50
October 1992
2
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
SYMBOL
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
CONDITIONS
−
−
−
up to T
mb
= 25
°C;
total device;
−
both sections equally loaded
−65
−
MIN.
BLF546
MAX.
65
20
9
145
150
200
UNIT
V
V
A
W
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
CONDITIONS
total device; both sections equally
loaded
total device; both sections equally
loaded
THERMAL
RESISTANCE
1.2 K/W
0.25 K/W
10
2
handbook, halfpage
ID
(A)
MRA995
handbook, halfpage
200
MDA519
Ptot
(W)
160
(2)
120
10
(1)
(2)
(1)
80
40
1
1
10
VDS (V)
10
2
0
0
40
80
120
Th (°C)
160
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
°C.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
CHARACTERISTICS (per section)
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 20 mA
V
GS
= 0; V
DS
= 28 V
±V
GS
= 20 V; V
DS
= 0
I
D
= 80 mA; V
DS
= 10 V
I
D
= 2.4 A; V
DS
= 10 V
I
D
= 2.4 A; V
GS
= 10 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
−
−
1
1.2
−
−
−
−
−
BLF546
TYP. MAX. UNIT
−
−
−
−
1.7
0.4
10
60
46
15
−
2
1
4
−
0.6
−
−
−
−
V
mA
µA
V
S
Ω
A
pF
pF
pF
handbook, halfpage
12
MDA520
handbook, halfpage
12
MDA521
T.C.
(mV/K)
8
ID
(A)
8
4
4
0
−4
10
−2
10
−1
1
ID (A)
10
0
0
4
8
12
VGS (V)
16
V
DS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF546
handbook, halfpage
0.8
MDA522
handbook, halfpage
250
MDA523
RDSon
(Ω)
0.6
C
(pF)
200
150
0.4
100
0.2
50
Cis
Cos
0
0
40
80
120
Tj (°C)
160
0
1
10
20
30
VDS (V)
40
I
D
= 2.4 A; V
GS
= 10 V.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
handbook, halfpage
80
MDA524
Crs
(pF)
60
40
20
0
0
10
20
30
VDS (V)
40
V
GS
= 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
October 1992
5
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