BSC014N03MS G
OptiMOS™3
M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant;
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
1.4
1.75
100
PG-TDSON-8
A
V
mΩ
Type
BSC014N03MS G
Package
PG-TDSON-8
Marking
014N03MS
C,
Maximum ratings,
at
T
j
=25 ° unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °
C
V
GS
=10 V,
T
C
=100 °
C
V
GS
=4.5 V,
T
C
=25 °
C
V
GS
=4.5 V,
T
C
=100 °
C
V
GS
=4.5 V,
T
A
=25 °
C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
100
100
100
Unit
A
100
30
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °
C
T
C
=25 °
C
I
D
=50 A,
R
GS
=25
Ω
400
50
340
±20
mJ
V
J-STD20 and JESD22
Rev. 1.5
page 1
2009-10-22
BSC014N03MS G
Maximum ratings,
at
T
j
=25 ° unless otherwise specified
C,
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °
C
T
A
=25 °
C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
139
2.5
-55 ... 150
55/150/56
°
C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Device on PCB
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
-
-
0.9
20
50
K/W
Electrical characteristics,
at
T
j
=25 ° unless otherwise specified
C,
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
C
T
j
=25 °
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °
C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
Gate resistance
Transconductance
2)
30
1
-
-
-
0.1
-
2
1
V
µA
-
-
-
-
0.7
10
10
1.4
1.2
1.5
140
100
100
1.75
1.4
2.6
-
Ω
S
nA
mΩ
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
70
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3 for more detailed information
3)
Rev. 1.5
page 2
2009-10-22
BSC014N03MS G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
26
16
13
23
63
2.6
130
34
21
22
35
84
-
173
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=4.5 V,
I
D
=30 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
10000
2600
210
32
16
43
16
13000 pF
3500
-
-
-
-
-
ns
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
55
70
73
93
nC
I
S
T
C
=25 °
C
I
S,pulse
V
SD
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °
C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.79
100
400
1.1
A
V
Reverse recovery charge
4)
5)
Q
rr
-
-
30
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 1.5
page 3
2009-10-22
BSC014N03MS G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
)
parameter:
V
GS
150
120
100
120
4.5 V
10 V
80
90
P
tot
[W]
I
D
[A]
60
30
0
0
40
80
120
160
60
40
20
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °
D
=0
C;
parameter:
t
p
10
3
limited by on-state
resistance
10 µs
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
10
2
DC
100 µs
1
1 ms
Z
thJC
[K/W]
I
D
[A]
0.5
10
1
10 ms
0.2
0.1
0.1
10
0
0.05
0.02
0.01
10
-1
10
-1
0.01
10
0
single pulse
0
0
0
0
0
0
1
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.5
page 4
2009-10-22
BSC014N03MS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °
C
parameter:
V
GS
300
4V
5V
3.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °
C
parameter:
V
GS
3
250
10 V
3V
200
2
3.2 V
3.5 V
4V
4.5 V
6V
5V
10 V
150
3V
100
2.8 V
R
DS(on)
[m
Ω
]
1
0
3
0
3.2 V
I
D
[A]
50
0
0
1
2
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
280
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °
C
320
240
280
200
240
200
160
g
fs
[S]
150 °
C
25 °
C
I
D
[A]
160
120
120
80
80
40
40
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 1.5
page 5
2009-10-22
京公网安备 11010802033920号
EEWORLD
