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MRF1570FNT1

Description
transistors RF mosfet RF ldmos to272-6N flat
Categorysemiconductor    Discrete semiconductor   
File Size612KB,23 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance  
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MRF1570FNT1 Overview

transistors RF mosfet RF ldmos to272-6N flat

MRF1570FNT1 Parametric

Parameter NameAttribute value
ManufactureFreescale Semiconduc
Product CategoryTransistors RF MOSFET
RoHSYes
ConfiguratiDual
Transistor PolarityN-Channel
Frequency470 MHz
Gai11.5 dB
Output Powe70 W
Vds - Drain-Source Breakdown Voltage40 V
Vgs - Gate-Source Breakdown Voltage+/- 20 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseTO-272-8 EP
PackagingReel
Minimum Operating Temperature- 65 C
Pd - Power Dissipati165 W
Factory Pack Quantity500
Vgs th - Gate-Source Threshold Voltage3 V
Unit Weigh1.279 g
Freescale Semiconductor
Technical Data
Document Number: MRF1570N
Rev. 10, 6/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 11.5 dB
Efficiency — 60%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Features
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Broadband - Full Power Across the Band: 135 - 175 MHz
400 - 470 MHz
Broadband Demonstration Amplifier Information Available Upon Request
200_C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1570NT1
MRF1570FNT1
470 MHz, 70 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366 - 05, STYLE 1
TO - 272 - 8 WRAP
PLASTIC
MRF1570NT1
CASE 1366A - 03, STYLE 1
TO - 272 - 8
PLASTIC
MRF1570FNT1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
+0.5, +40
±
20
165
0.5
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
0.29
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M2 (Minimum)
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF1570NT1 MRF1570FNT1
1
RF Device Data
Freescale Semiconductor

MRF1570FNT1 Related Products

MRF1570FNT1 MRF1570NT1
Description transistors RF mosfet RF ldmos to272-6N flat transistors RF mosfet RF ldmos to272-6N formed
Manufacture Freescale Semiconduc Freescale Semiconduc
Product Category Transistors RF MOSFET Transistors RF MOSFET
RoHS Yes Yes
Configurati Dual Dual
Transistor Polarity N-Channel N-Channel
Frequency 470 MHz 470 MHz
Gai 11.5 dB 11.5 dB
Output Powe 70 W 70 W
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Vgs - Gate-Source Breakdown Voltage +/- 20 V +/- 20 V
Maximum Operating Temperature + 150 C + 150 C
Mounting Style SMD/SMT SMD/SMT
Package / Case TO-272-8 EP TO-272-8 Wrap EP
Packaging Reel Reel
Minimum Operating Temperature - 65 C - 65 C
Pd - Power Dissipati 165 W 165 W
Factory Pack Quantity 500 500
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Unit Weigh 1.279 g 1.277 g
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