Freescale Semiconductor
Technical Data
Document Number: MRF1570N
Rev. 10, 6/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
•
Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 11.5 dB
Efficiency — 60%
•
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Features
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Broadband - Full Power Across the Band: 135 - 175 MHz
400 - 470 MHz
•
Broadband Demonstration Amplifier Information Available Upon Request
•
200_C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1570NT1
MRF1570FNT1
470 MHz, 70 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366 - 05, STYLE 1
TO - 272 - 8 WRAP
PLASTIC
MRF1570NT1
CASE 1366A - 03, STYLE 1
TO - 272 - 8
PLASTIC
MRF1570FNT1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
+0.5, +40
±
20
165
0.5
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
0.29
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M2 (Minimum)
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF1570NT1 MRF1570FNT1
1
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 0.8 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
RF Characteristics
(In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 70 W, I
DQ
= 800 mA)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 70 W, I
DQ
= 800 mA)
f = 470 MHz
f = 470 MHz
G
ps
η
—
—
11.5
60
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
—
—
—
500
250
35
pF
pF
pF
V
GS(th)
V
DS(on)
1
—
—
—
3
1
Vdc
Vdc
I
DSS
—
—
1
μA
Symbol
Min
Typ
Max
Unit
MRF1570NT1 MRF1570FNT1
2
RF Device Data
Freescale Semiconductor
B1
V
GG
C14
C13
C12
+
C11
R1
Z2
RF
INPUT
C1 Z1
C2
C3
R4
Z3
L2
C5
Z5
L4
C7
B2
V
GG
C19
C18
C17
+
C16
C15
C44
C43
Z7
C9
R2
L10
Z9
Z11
Z13
Z15
L1
C4
Z4
L3
C6
C8
DUT
C21
C23
Z6
R3
Z8
Z10
Z12
C20
C10
C38
C37
B3
B4
C36
C35
C34
+ V
DD
C33
L9
Z14
C22
Z16
C24
L5
C26
L7
C28
Z18
C30
RF
OUTPUT
C32
Z21
Z20
Z22
C25
C27
Z17
L6
L8
C29
Z19
C31
B5
B6
C42
C41
C40
+ V
DD
C39
B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products
C1, C32, C37, C43
270 pF, 100 mil Chip Capacitors
C2, C20, C21
33 pF, 100 mil Chip Capacitors
C3
18 pF, 100 mil Chip Capacitor
C4, C5
30 pF, 100 mil Chip Capacitors
C6, C7
180 pF, 100 mil Chip Capacitors
C8, C9
150 pF, 100 mil Chip Capacitors
C10, C15
300 pF, 100 mil Chip Capacitors
C11, C16, C33, C39 10
μF,
50 V Electrolytic Capacitors
C12, C17, C34, C40 0.1
μF,
100 mil Chip Capacitors
C13, C18, C35, C41 1000 pF, 100 mil Chip Capacitors
C14, C19, C36, C42 470 pF, 100 mil Chip Capacitors
C22, C23
110 pF, 100 mil Chip Capacitors
C24, C25
68 pF, 100 mil Chip Capacitors
C26, C27
120 pF, 100 mil Chip Capacitors
C28, C29
24 pF, 100 mil Chip Capacitors
C30, C31
27 pF, 100 mil Chip Capacitors
C38, C44
240 pF, 100 mil Chip Capacitors
L1, L2
17.5 nH, 6 Turn Inductors, Coilcraft
L3, L4
L5, L6, L7, L8
L9, L10
N1, N2
R1, R2
R3, R4
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9, Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22
Board
5 nH, 2 Turn Inductors, Coilcraft
1 Turn, #18 AWG, 0.33″ ID Inductors
3 Turn, #16 AWG, 0.165″ ID Inductors
Type N Flange Mounts
25.5
Ω
Chip Resistors (1206)
9.3
Ω
Chip Resistors (1206)
0.32″ x 0.080″ Microstrip
0.46″ x 0.080″ Microstrip
0.34″ x 0.080″ Microstrip
0.45″ x 0.080″ Microstrip
0.28″ x 0.240″ Microstrip
0.39″ x 0.080″ Microstrip
0.27″ x 0.080″ Microstrip
0.25″ x 0.080″ Microstrip
0.29″ x 0.080″ Microstrip
0.14″ x 0.080″ Microstrip
0.32″ x 0.080″ Microstrip
31 mil Glass Teflon
®
Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic
MRF1570NT1 MRF1570FNT1
RF Device Data
Freescale Semiconductor
3
V
GG
C11
GND
B1
C38
C12 C13 C14
C4
C1
C2
L1
L3
C6
C10
R1
C8
R3
R4
C9
R2
C15
C44
C43
B2
C16
MRF1570T1
B5
B6
C39
L9
C22
C23
L10
C26
C27
L6
C21 C25
L8
C29 C42 C41 C40
C37
C20 C24
L5
B3
B4
C33
V
DD
GND
C28 C36 C35 C34
L7
C30
C31
C32
C3
C5
C17 C18 C19
L2
C7
L4
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout
TYPICAL CHARACTERISTICS, 135 - 175 MHz
100
Pout , OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
0
80
135 MHz
60
175 MHz
40
150 MHz
20
V
DD
= 12.5 Vdc
0
0
1
2
3
4
5
6
P
in
, INPUT POWER (WATTS)
−5
135 MHz
−10
175 MHz
155 MHz
−15
V
DD
= 12.5 Vdc
−20
10
20
30
40
50
60
70
80
90
P
out
, OUTPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
Figure 4. Input Return Loss versus Output Power
MRF1570NT1 MRF1570FNT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS, 135 - 175 MHz
18
V
DD
= 12.5 Vdc
17
G ps , POWER GAIN (dB)
16
15
14
13
12
10
155 MHz
175 MHz
135 MHz
η
, DRAIN EFFICIENCY (%)
60
70
155 MHz
175 MHz
135 MHz
50
40
30
V
DD
= 12.5 Vdc
20
10
20
30
40
50
60
70
80
90
20
30
40
50
60
70
80
90
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 5. Gain versus Output Power
Figure 6. Drain Efficiency versus Output Power
90
100
Pout , OUTPUT POWER (WATTS)
80
135 MHz
155 MHz
175 MHz
η
, DRAIN EFFICIENCY (%)
80
155 MHz
175 MHz
135 MHz
60
40
70
60
V
DD
= 12.5 Vdc
P
in
= 36 dBm
50
400
600
800
1000
1200
1400
1600
20
0
400
V
DD
= 12.5 Vdc
P
in
= 36 dBm
600
800
1000
1200
1400
1600
I
DQ
, BIASING CURRENT (mA)
I
DQ
, BIASING CURRENT (mA)
Figure 7. Output Power versus Biasing Current
Figure 8. Drain Efficiency versus Biasing Current
100
Pout , OUTPUT POWER (WATTS)
100
135 MHz
60
175 MHz
155 MHz
η
, DRAIN EFFICIENCY (%)
80
80
155 MHz
175 MHz
60
135 MHz
40
40
20
0
10
P
in
= 36 dBm
I
DQ
= 800 mA
11
12
13
14
15
20
0
10
11
12
13
P
in
= 36 dBm
I
DQ
= 800 mA
14
15
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
Figure 10. Drain Efficiency versus Supply Voltage
MRF1570NT1 MRF1570FNT1
RF Device Data
Freescale Semiconductor
5
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