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MIXA300PF1200TSF

Description
igbt modules xpt igbt module
Categorysemiconductor    Discrete semiconductor   
File Size168KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Environmental Compliance  
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MIXA300PF1200TSF Overview

igbt modules xpt igbt module

MIXA300PF1200TSF Parametric

Parameter NameAttribute value
ManufactureIXYS
Product CategoryIGBT Modules
ProducIGBT Silicon Modules
ConfiguratiIGBT-Inverte
Collector- Emitter Voltage VCEO Max1200 V
Collector-Emitter Saturation Voltage1.8 V
Continuous Collector Current at 25 C465 A
Gate-Emitter Leakage Curre0.3 mA
Power Dissipati1500 W
Maximum Operating Temperature+ 125 C
PackagingBulk
Maximum Gate Emitter Voltage+/- 20 V
Minimum Operating Temperature- 40 C
Mounting StyleSMD/SMT
Factory Pack Quantity3
MIXA300PF1200TSF
tentative
XPT IGBT Module
V
CES
I
C25
= 2x 1200 V
=
465 A
1.8 V
V
CE(sat)
=
Phase leg + free wheeling Diodes + NTC
Part number
MIXA300PF1200TSF
Backside: isolated
5
2
1
8
7
9
3
4
6
10/11
Features / Advantages:
High level of integration - only one
power semiconductor module required
for the whole drive
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
Temperature sense included
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
AC motor drives
Pumps, Fans
Air-conditioning system
Inverter and power supplies
UPS
Package:
SimBus F
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Height: 17 mm
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20121105
© 2012 IXYS all rights reserved
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