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CRS03(TE85L,Q)

Description
schottky diodes & rectifiers 30v 1A
CategoryDiscrete semiconductor    diode   
File Size182KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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CRS03(TE85L,Q) Overview

schottky diodes & rectifiers 30v 1A

CRS03(TE85L,Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.45 V
Maximum non-repetitive peak forward current20 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
CRS03
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CRS03
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Low forward voltage: V
FM
= 0.45 V (max) @ I
FM
=
0.7 A
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“S−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
30
1.0 (Note 1)
20 (50 Hz)
−40
to 150
−40
to 150
Unit
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
3-2A1A
Note 1: Ta
=
61°C
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm, land size: 6 mm
×
6 mm)
Rectangular waveform (α
=
180°), V
R
=
15 V
Weight: 0.013 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM (1)
I
RRM (2)
C
j
Test Condition
I
FM
=
0.1 A
I
FM
=
0.7 A
I
FM
=
1.0 A
V
RRM
=
5 V
V
RRM
=
30 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance (junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
Min
Typ.
0.33
0.425
0.45
0.5
40
Max
0.45
100
70
°C/W
140
20
°C/W
μA
pF
V
Unit
Thermal resistance (junction to lead)
R
th (j-ℓ)
1
2010-02-01

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