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B614F-2T

Description
discrete semiconductor modules 1200v vrrm 42.5A thyrs module
Categorysemiconductor    Discrete semiconductor   
File Size780KB,4 Pages
ManufacturerAll Sensors
Environmental Compliance  
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B614F-2T Overview

discrete semiconductor modules 1200v vrrm 42.5A thyrs module

B614F-2T Parametric

Parameter NameAttribute value
ManufactureCrydom
Product CategoryDiscrete Semiconductor Modules
RoHSN
ProducDiode Power Modules
TypeSCR / Diode Module
Factory Pack Quantity5
B-2T, B-2 Series
Eight Circuits to Choose from
For AC or DC Variable Voltage
Output Up to 15KW
• UL Recognized E72445
AVAILABLE OPTIONS
ELECTRICAL SPECIFICATIONS
Description
Maximum DC Output Current (Tc = 85°C)
Maximum Voltage Drop @ Amps Peak
Operating Junction Temperature Range
Critical Rate of Rise of On-State Current @ TJ=125°C
Critical Rate of Rise of Off-State Voltage [V/µs]
AC Line Input Voltage (Repetitive Peak Reverse Voltage)
AC Line Input Voltage (Repetitive Peak Reverse Voltage)
AC Line Input Voltage (Repetitive Peak Reverse Voltage)
AC Line Input Voltage (Repetitive Peak Reverse Voltage)
Maximum Non-Repetitive Surge Current (1/2 Cycle, 60 Hz)
Maximum I²T for Fusing (t=8.3ms) [A²sec]
Minimum Required Gate Current to Trigger @ 25°C
Minimum Required Gate Voltage to Trigger @ 25°C
Average Gate Power
Maximum Peak Reverse Gate Voltage
Maximum Thermal Resistance, Junction to Ceramic Base per Chip
Isolation Voltage
Symbol
I
D
V
F
T
J
di/dt
dv/dt
V
RMS
V
RMS
V
RMS
V
RMS
I
TSM
I
2
T
I
GT
V
GT
P
G(AV)
V
GM
R
JC
V
ISOL
B5
25A
1.65V @ 25A
-40 - 125°C
100A/µs
500V/µs
120 (400V
RRM)
240 (600V
RRM)
280 (800V
RRM)
480 (1200V
RRM)
250A
260
60mA
2.5V
0.5W
5.0V
0.9°C/W
2500 Vrms
B6
42.5A
1.65V @ 42.5A
-40 - 125°C
100A/µs
500V/µs
120 (400V
RRM)
240 (600V
RRM)
280(800V
RRM)
480(1200V
RRM)
600A
1500
80mA
3.0V
0.5W
5.0V
0.7°C/W
2500 Vrms
GENERAL SPECIFICATIONS
Description
Weight (typical)
1.5 oz (42.5g)

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