SQD200A40 datasheet, PDF - EEWORLD Datasheet

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SQD200A40: DescriptionTRANSISTOR MODULE; File Size95KB，2 Pages; ManufacturerETC

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SQD200A40 Overview

TRANSISTOR MODULE

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TRANSISTOR MODULE

SQD200A40/60

UL;E76102 M）

（

SQD200A

is a Darlington power transistor module which a high speed, high power

Darlington transistor. The transistor has a reverse paralled fast recovery diode. The

mounting base of the module is electrically isolated from semiconductor elements for

simple heatsink construction,

V

CEX

＝400/600V

●

Low saturation voltage for higher efficiency.

●

High DC current gain h

FE

●

Isolated mounting base

●

V

EBO

10V for faster switching speed.

（Applications）

Motor Control（VVVF） AC/DC Servo, UPS,

,

Switching Power Supply, Ultrasonic Application

C1

E1

B1

B1X

●

I

C

＝200A,

95max

80±0.25

23

4½φ5.5

62max

48±0.25

15

1

2

3

B

2

E

2

B

1

X

C

1

E

1

C

1

M5×10

30max

110Tab

7

21

E1

C1

66

Unit：A

■Maximum

Ratings

Symbol

V

CBO

V

CEX

V

EBO

I

C

−I

C

I

B

P

T

j

Tstg

V

ISO

Item

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Reverse Collector Current

Base Current

Total power dissipation

Junction Temperature

Storage Temperature

Isolation Voltage

Mounting

Torque

Mass

（M5）

Terminal（M5）

A.C.1minute

T

C

＝25℃

（）=pw≦1ms

V

BE

＝−2V

Conditions

（Tj＝25℃

unless otherwise specified）

Ratings

SQD200A40 SQD200A60

400

10

200（400）

200

12

1250

−40

to

＋150

−40

to

＋125

2500

2.7（28）

380

Recommended Value 1.5-2.5（15-25）

Typical Value

600

Unit

V

A

W

℃

V

N½m

(㎏f½B)

g

■Electrical

Characteristics

Symbol

I

CBO

I

EBO

（SUS）

V

CEO

Item

Collector Cut-off Current

Emitter Cut-off Current

SQD200A40

Collector Emitter

Sustaning Voltage

SQD200A60

SQD200A40

SQD200A60

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

On Time

Switching Time

Storage Time

Fall Time

Collector-Emitter Reverse Voltage

Thermal Impedance

(junction to case)

V

CB

＝V

CBO

V

EB

＝V

EBO

Ic＝1A

Conditions

Ratings

Min.

Max.

2.0

800

300

450

400

600

75

100

2.0

2.5

2.0

12.0

3.0

1.4

0.1

0.3

Unit

mA

V

（SUS）

V

CEX

Ic＝40A，I

B2

＝−8A

Ic＝200A，V

CE

＝2V

Ic＝200A，V

CE

＝5V

Ic＝200A，I

B

＝2.7A

Ic＝200A，I

B

＝2.7A

Vcc＝300V，Ic＝200A

I

B1

＝4A，I

B2

＝−4A

−Ic＝200A

Transistor part

Diode part

h

FE

V

CE(sat)

V

BE(sat)

ton

ts

tf

V

ECO

Rth(j-c)

V

μs

V

℃/W

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

SQD200A40 Related Products

	SQD200A40	SQD200A60
Description	TRANSISTOR MODULE	TRANSISTOR MODULE

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