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SQD200A60

Description
TRANSISTOR MODULE
File Size95KB,2 Pages
ManufacturerETC
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SQD200A60 Overview

TRANSISTOR MODULE

TRANSISTOR MODULE
SQD200A40/60
UL;E76102 M)
SQD200A
is a Darlington power transistor module which a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction,
V
CEX
=400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
(Applications)
Motor Control(VVVF) AC/DC Servo, UPS,
,
Switching Power Supply, Ultrasonic Application
C1
E1
B1
B1X
I
C
=200A,
95max
80±0.25
23
23
4½φ5.5
62max
48±0.25
15
1
2
3
B
2
E
2
B
1
X
C
1
E
1
C
1
M5×10
30max
110Tab
7
21
E1
C1
66
Unit:A
■Maximum
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
−I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
(M5)
Terminal(M5)
A.C.1minute
T
C
=25℃
( )=pw≦1ms
V
BE
=−2V
Conditions
(Tj=25℃
unless otherwise specified)
Ratings
SQD200A40 SQD200A60
400
400
10
200(400)
200
12
1250
−40
to
+150
−40
to
+125
2500
2.7(28)
2.7(28)
380
Recommended Value 1.5-2.5(15-25)
Recommended Value 1.5-2.5(15-25)
Typical Value
600
600
Unit
V
V
V
A
A
A
W
V
N½m
(㎏f½B)
g
■Electrical
Characteristics
Symbol
I
CBO
I
EBO
(SUS)
V
CEO
Item
Collector Cut-off Current
Emitter Cut-off Current
SQD200A40
Collector Emitter
Sustaning Voltage
SQD200A60
SQD200A40
SQD200A60
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
V
CB
=V
CBO
V
EB
=V
EBO
Ic=1A
Conditions
Ratings
Min.
Max.
2.0
800
300
450
400
600
75
100
2.0
2.5
2.0
12.0
3.0
1.4
0.1
0.3
Unit
mA
mA
V
V
(SUS)
V
CEX
Ic=40A,I
B2
=−8A
Ic=200A,V
CE
=2V
Ic=200A,V
CE
=5V
Ic=200A,I
B
=2.7A
Ic=200A,I
B
=2.7A
Vcc=300V,Ic=200A
I
B1
=4A,I
B2
=−4A
−Ic=200A
Transistor part
Diode part
h
FE
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Rth(j-c)
V
V
μs
V
℃/W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

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