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MAC4DSM-1G

Description
triacs thy 4A 600v triac
CategoryAnalog mixed-signal IC    Trigger device   
File Size149KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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MAC4DSM-1G Overview

triacs thy 4A 600v triac

MAC4DSM-1G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-252
package instructionIN-LINE, R-PSIP-T3
Contacts4
Manufacturer packaging code369D
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current15 mA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Maximum leakage current0.01 mA
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current4 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Trigger device typeTRIAC
MAC4DSM, MAC4DSN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
http://onsemi.com
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On−State Current Rating of 4.0 Amperes RMS at 108°C
Low IGT
10 mA Maximum in 3 Quadrants
High Immunity to dv/dt
50 V/ms at 125°C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage
(Note 1) (T
J
=
−40
to 125°C, Sine
Wave, 50 to 60 Hz, Gate Open)
MAC4DSM
MAC4DSN
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz,
T
C
= 108°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 125°C)
Circuit Fusing Consideration
(t = 8.3 msec)
Peak Gate Power
(Pulse Width
10
msec,
T
C
= 108°C)
Average Gate Power
(t = 8.3 msec, T
C
= 108°C)
Peak Gate Current
(Pulse Width
20
msec,
T
C
= 108°C)
Peak Gate Voltage
(Pulse Width
20
msec,
T
C
= 108°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
4.0
A
1
I
TSM
40
A
2
Value
Unit
V
1 2
3
TRIACS
4.0 AMPERES RMS
600
800 VOLTS
MT2
G
MT1
MARKING
DIAGRAMS
4
DPAK
CASE 369C
STYLE 6
YWW
AC
4DSxG
4
DPAK−3
CASE 369D
STYLE 6
3
Y
WW
AC4DSx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
YWW
AC
4DSxG
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
stg
6.6
2.0
1.0
4.0
5.0
−40
to 125
−40
to 150
A
2
sec
W
W
A
V
°C
°C
1
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
©
Semiconductor Components Industries, LLC, 2009
January, 2009
Rev. 6
1
Publication Order Number:
MAC4DSM/D

MAC4DSM-1G Related Products

MAC4DSM-1G MAC4DSN-1G
Description triacs thy 4A 600v triac triacs thy 4A 800v triac
Brand Name ON Semiconduc ON Semiconductor
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-252 TO-252
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 4 4
Manufacturer packaging code 369D 369D
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Shell connection MAIN TERMINAL 2 MAIN TERMINAL 2
Configuration SINGLE SINGLE
Critical rise rate of minimum off-state voltage 50 V/us 50 V/us
Maximum DC gate trigger current 10 mA 10 mA
Maximum DC gate trigger voltage 1.3 V 1.3 V
Maximum holding current 15 mA 15 mA
JESD-30 code R-PSIP-T3 R-PSIP-T3
JESD-609 code e3 e3
Maximum leakage current 0.01 mA 0.01 mA
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260
Certification status Not Qualified Not Qualified
Maximum rms on-state current 4 A 4 A
Off-state repetitive peak voltage 600 V 800 V
surface mount NO NO
Terminal surface Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
Trigger device type TRIAC TRIAC
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