DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxS2UAT series
Double ESD protection diodes
in SOT23 package
Product data sheet
2004 Feb 18
NXP Semiconductors
Product data sheet
Double ESD protection diodes
in SOT23 package
FEATURES
•
Unidirectional ESD protection of up to two lines
•
Common-cathode configuration
•
Max. peak pulse power: P
pp
= 330 W at t
p
= 8/20
µs
•
Low clamping voltage: V
(CL)R
= 20 V at I
pp
= 18 A
•
Ultra-low reverse leakage current: I
RM
< 700 nA
•
ESD protection > 30 kV
•
IEC 61000-4-2; level 4 (ESD)
•
IEC 61000-4-5 (surge); I
pp
= 18 A at t
p
= 8/20
µs.
PINNING
APPLICATIONS
•
Computers and peripherals
•
Communication systems
•
Audio and video equipment
•
Data lines
•
CAN bus protection.
DESCRIPTION
Unidirectional double ESD protection diodes in common
cathode configuration in the SOT23 plastic package.
Designed to protect up to two transmission or data lines
against damage from ElectroStatic Discharge (ESD) and
other transients.
MARKING
TYPE NUMBER
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
MARKING CODE
(1)
*7A
*7B
*7C
*7D
*7E
1
PESDxS2UAT series
QUICK REFERENCE DATA
SYMBOL
V
RWM
C
d
PARAMETER
reverse stand-off
voltage
diode capacitance
V
R
= 0 V;
f = 1 MHz
number of
protected lines
VALUE
3.3, 5, 12, 15
and 24
UNIT
V
207, 152, 38, 32 pF
and 23
2
PIN
1
2
3
anode 1
anode 2
DESCRIPTION
common cathode
3
1
3
2
2
001aaa401
sym002
Fig.1 Simplified outline (SOT23) and symbol.
2004 Feb 18
2
NXP Semiconductors
Product data sheet
Double ESD protection diodes
in SOT23 package
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
P
pp
PARAMETER
peak pulse power
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
I
pp
peak pulse current
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
T
j
T
amb
T
stg
Notes
1. Non-repetitive current pulse 8/20µ
µs
exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
junction temperature
operating ambient temperature
storage temperature
8/20
µs
pulse; notes 1 and 2
CONDITIONS
8/20
µs
pulse; notes 1 and 2
−
DESCRIPTION
plastic surface mounted package; 3 leads
PESDxS2UAT series
VERSION
SOT23
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−65
MAX.
330
260
180
160
160
18
15
5
5
3
150
+150
+150
UNIT
W
W
W
W
W
A
A
A
A
A
°C
°C
°C
2004 Feb 18
3
NXP Semiconductors
Product data sheet
Double ESD protection diodes
in SOT23 package
ESD maximum ratings
SYMBOL
ESD
PARAMETER
electrostatic discharge
CONDITIONS
PESDxS2UAT series
VALUE
UNIT
IEC 61000-4-2 (contact discharge);
notes 1 and 2
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
HBM MIL-Std 883
PESDxS2UAT-series
10
kV
30
30
30
30
23
kV
kV
kV
kV
kV
Notes
1. Device stressed with ten non-repetitive ESD pulses; see Fig.3.
2. Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
ESD standards compliance
ESD STANDARD
IEC 61000-4-2; level 4 (ESD); see Fig.3
HBM MIL-Std 883; class 3
> 4 kV
CONDITIONS
> 15 kV (air); > 8 kV (contact)
001aaa191
handbook, halfpage
120
MLE218
I
pp
100 %
90 %
Ipp
(%)
100 % Ipp; 8
µs
80
e
−t
50 % Ipp; 20
µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
=
0.7 to 1 ns
30 ns
60 ns
t
Fig.2
8/20
µs
pulse waveform according to
IEC 61000-4-5.
Fig.3
ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
2004 Feb 18
4
NXP Semiconductors
Product data sheet
Double ESD protection diodes
in SOT23 package
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
RWM
PARAMETER
reverse stand-off voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
I
RM
reverse leakage current
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
V
BR
breakdown voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
C
d
diode capacitance
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
V
(CL)R
clamping voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
notes 1 and 2
I
pp
= 1 A
I
pp
= 18 A
I
pp
= 1 A
I
pp
= 15 A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 3 A
−
−
−
−
−
−
−
−
−
−
f = 1 MHz; V
R
= 0 V
−
−
−
−
−
V
RWM
= 3.3 V
V
RWM
= 5 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
Z
= 5 mA
5.2
6.4
14.7
17.6
26.5
−
−
−
−
−
−
−
−
−
−
CONDITIONS
PESDxS2UAT series
MIN.
−
−
−
−
−
TYP.
MAX.
3.3
5
12
15
24
2
1
50
50
50
6.0
7.2
15.3
18.4
27.5
300
200
75
70
50
7
20
9
20
19
35
23
40
36
70
UNIT
V
V
V
V
V
µA
µA
nA
nA
nA
V
V
V
V
V
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
0.7
0.1
<1
<1
<1
5.6
6.8
15.0
18.0
27.0
207
152
38
32
23
−
−
−
−
−
−
−
−
−
−
2004 Feb 18
5
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